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On the influence of interfaces and localised stress fields on irradiation-induced point-defect distributions in silicon

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Abstract

High-flux 1-MeV electron irradiation in a high voltage transmission electron microscope is used to study the influence of interfaces and localised stress fields on {113}-defect generation in silicon. A semi-quantitative model is presented to explain the observations, suggesting that the silicon oxide/silicon interface is a stronger sink for self-interstitials than for vacancies. It is shown that the position and the height of the maximum of the {113}-defect density strongly depends on the strength of the interface as a vacancy sink and that compressive straining of the silicon substrate slows down the diffusion of vacancies towards the interface.

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Author notes

  1. A. Romano-Rodríguez

    Present address: LCMM, Department de Física Aplicada i Electrònica, Universitat de Barcelona, bDiagonal 647, E-08028, Barcelona, Spain

Authors and Affiliations

  1. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    J. Vanhellemont & A. Romano-Rodríguez

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  1. J. Vanhellemont
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  2. A. Romano-Rodríguez
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Vanhellemont, J., Romano-Rodríguez, A. On the influence of interfaces and localised stress fields on irradiation-induced point-defect distributions in silicon. Appl. Phys. A 57, 521–527 (1993). https://doi.org/10.1007/BF00331752

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  • DOI: https://doi.org/10.1007/BF00331752

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