Abstract
Electronic transport properties of mechanically alloyed phosphorous-doped SiGe alloys at low temperatures were examined. We found that in this granular medium hopping-processes show an influence on the electronic conductivity. In addition, Hall-measurements revealed that the electron mobility reflects the band-structure of this alloy concerning intervalley-scattering and alloy-scattering. Mobility reaches a minimum at an alloy composition of roughly 25 at.% silicon.
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