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Surface structure of β-FeSi2(101) epitaxially grown on Si(111)

  • Surface Physics 1993
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Abstract

The surface morphology and structure of β-FeSi2(101) films epitaxially grown on Si(111) has been studied by means of Scanning Tunneling Microscopy (STM). The films are formed by large crystallites which are single domain. Each crystallite has only one of the three possible azimuthal orientations with respect to the substrate. A large density of planar defects, however, is detected on top of each crystallite. They are assigned to intrinsic stacking faults and their existence seems hard to avoid. This high density of intrinsic defects casts serious doubts on the use of β-FeSi2 as an optoelectronic material.

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Authors and Affiliations

  1. Departamento de Física de la Materia Condensada, C-III, Universidad Autónoma de Madrid, Cantoblanco, E-28049, Madrid, Spain

    A. L. Vázquez de Parga, J. de la Figuera, J. E. Prieto, C. Ocal & R. Miranda

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  1. A. L. Vázquez de Parga
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  2. J. de la Figuera
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  3. J. E. Prieto
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  4. C. Ocal
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  5. R. Miranda
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Vázquez de Parga, A.L., de la Figuera, J., Prieto, J.E. et al. Surface structure of β-FeSi2(101) epitaxially grown on Si(111). Appl. Phys. A 57, 477–482 (1993). https://doi.org/10.1007/BF00331745

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  • DOI: https://doi.org/10.1007/BF00331745

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