Abstract
The transitions between the multiplets of 42 P → 42 D and 42 P → 52 P in Ga have been studied by observing the ions produced in the ablation of a GaAs surface using a tunable dye laser. The asymmetric spectral profiles of the 42 P → 42 D transitions, and the large differences in laser power dependence of the ion yields for the different resonant schemes were observed and analysed. The experimental data are interpreted as resulting from laser-induced collisional processes, especially, from optical collisional excitation and energy-pooling ionisation.
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Wang, L., Ledingham, K.W.D., McLean, C.J. et al. Laser-induced collisional processes in resonant laser ablation of GaAs. Appl. Phys. B 54, 71–75 (1992). https://doi.org/10.1007/BF00331736
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DOI: https://doi.org/10.1007/BF00331736