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Defect study on electron irradiated GaAs by means of positron annihilation

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Abstract

Measurements of the positron lifetime and Doppler-broadened annihilation-radiation have been performed in electron-irradiated GaAs. The positron lifetime at the irradiation induced defects was ∼0.250 ns at 300 K. The defect clustering stage was found to occur at around 520–620 K, and the coarsening and annealing stage is believed to be above 620 K. Similar annealing stages were also observed in GaAs lightly doped with Si (0.2×1018 cm−3). Both the lifetime and the S-parameter in the irradiated GaAs were found to decrease with temperature from 300 K to 100 K, suggesting the coexistence of shallow traps in electron irradiated GaAs.

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Authors and Affiliations

  1. The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, 351-01, Saitama, Japan

    Y. Itoh

  2. Department of Physics, Faculty of Education, Tokyo Gakugei University, Koganei-shi, 184, Tokyo, Japan

    H. Murakami

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  1. Y. Itoh
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  2. H. Murakami
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Itoh, Y., Murakami, H. Defect study on electron irradiated GaAs by means of positron annihilation. Appl. Phys. A 58, 59–62 (1994). https://doi.org/10.1007/BF00331517

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  • DOI: https://doi.org/10.1007/BF00331517

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