Abstract
The effects of carrier transport on turn-on delay time in multiple quantum well lasers were investigated both theoretically and experimentally. By using rate equation analysis with two components of the carrier density inside and outside of the quantum wells, we found that carrier transport caused two important effects: one is the stationary effect of a significant reduction in carrier density in quantum wells; the other is an increase in differential carrier lifetime.
As an experimental investigation, compressively strained 1.3 μm GalnAsP/InP multiple quantum well (MQW) lasers were fabricated and their turn-on delay times were measured and investigated. The short-cavity buried-heterostructure lasers showed low-threshold current (2 to 3 mA) and small turn-on delay time (<200 ps) at biasless 30 mA pulse current. Although these performances are suitable for high-speed digital transmission, it was found that the carrier lifetimes derived from the turn-on delay measurement were larger for strained quantum well lasers than for conventional quantum well lasers and double heterostructure lasers. These phenomena are explained using the carrier transport model and are discussed. The solutions for further reduction in carrier lifetime and turn-on delay are discussed.
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Fukushima, T., Namegaya, T., Ikegami, Y. et al. Carrier transport and its effect on the turn-on delay time in strained GalnAsP/InP multiple quantum well lasers. Opt Quant Electron 26, S843–S855 (1994). https://doi.org/10.1007/BF00326665
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DOI: https://doi.org/10.1007/BF00326665