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Ultrafast carrier dynamics in In1−x Ga x As/InP heterostructures

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Abstract

We investigate carrier capture and carrier transport in the InGaAs/InP material system by luminescence spectroscopy with femtosecond time resolution. Comparative studies are performed on samples of different well width, barrier width and gallium mole fraction of the InGaAs layers. The investigations focus on excitation conditions that are comparable to those for semiconductor laser operation. Firm data on carrier dynamics are presented for these conditions. We find that the overall transfer rates of electrons and holes are similar and independent of well width. Furthermore, the transfer times show a linear dependence on barrier width. From experimental and model calculation results we derive some guidelines for the design of high-frequency laser devices.

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Authors and Affiliations

  1. RWTH Aachen, Institut für Halbleitertechnik, Sommerfeldstrasse, D-52056, Aachen, Germany

    R. Kersting, R. Schwedler, A. Kohl, K. Leo & H. Kurz

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  1. R. Kersting
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  2. R. Schwedler
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  3. A. Kohl
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  4. K. Leo
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  5. H. Kurz
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Kersting, R., Schwedler, R., Kohl, A. et al. Ultrafast carrier dynamics in In1−x Ga x As/InP heterostructures. Opt Quant Electron 26, S705–S718 (1994). https://doi.org/10.1007/BF00326657

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  • DOI: https://doi.org/10.1007/BF00326657

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