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Carrier transport effects in quantum well lasers: an overview

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Abstract

Early theoretical predictions and later experimental work have shown that lasers with quantum well active areas have enhanced differential gain over bulk lasers. The resonance frequency in a semiconductor laser is proportional to the square root of the differential gain. The resonance frequency is directly related to the modulation bandwidth, and the enhancement in the intrinsic differential gain led to theoretical predictions of increased modulation bandwidth in quantum well lasers. This enhancement in the modulation bandwidth proved to be elusive initially, and later it was realized that other factors, namely carrier transport effects, played a more dominant role in the high-speed properties of quantum well lasers. Carrier transport effects, in addition to bandfilling, affect a wide range of static and dynamic properties of the quantum well lasers. This paper will present an overview of our present understanding of the carrier transport processes and their effects in quantum well lasers.

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  1. Department of Electrical and Computer Engineering, University of California, 93106, Santa Barbara, CA, USA

    Radhakrishnan Nagarajan

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Nagarajan, R. Carrier transport effects in quantum well lasers: an overview. Opt Quant Electron 26, S647–S666 (1994). https://doi.org/10.1007/BF00326653

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  • DOI: https://doi.org/10.1007/BF00326653

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