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Effect of laser light on n-GaAs photoetching

  • Surface And Multilayers
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Abstract

The etching of n-GaAs in aqueous solutions of hydroxides stimulated by HeNe and HeCd laser light was studied. It was found that at low laser-power densities (5–10 W · cm−2) the etched depths do not depend on the wavelength of the incident light. This conclusion is related to the concentration of the photogenerated holes on the semiconductor surface. The diffusion length and absorption depths for HeNe and HeCd lasers are compared.

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Authors and Affiliations

  1. Department of Electronics Materials, Institute of Chemical Technology, CS-166 28, Prague 6, Czechoslovakia

    V. Švorčík & V. Rybka

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  1. V. Švorčík
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  2. V. Rybka
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Švorčík, V., Rybka, V. Effect of laser light on n-GaAs photoetching. Appl. Phys. A 51, 61–63 (1990). https://doi.org/10.1007/BF00324466

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  • DOI: https://doi.org/10.1007/BF00324466

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