Skip to main content
SpringerLink
Log in

Simulation of range profiles for boron implantation into SiO2/Si and Si3N4/SiO2/Si targets

  • Solids And Materials
  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

The simple method of profile combination is shown to be applicable to the simulation of boron profiles in SiO2/Si and Si3N4/Si layered targets. This is demonstrated by comparison with range distributions calculated by more sophisticated theoretical methods, i.e. TRIM Monte Carlo simulations and the algorithm of Christel et al., and with experimental data. The method of profile combination can also be applied to layered targets with a crystalline silicon substrate.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. Posselt: Phys. Status Solidi A 112, 263 (1989)

    Google Scholar 

  2. H. Ishiwara, S. Furukawa, J. Yamada, M. Kawamura: In: Ion Implantation in Semiconductors, ed. by S. Namba (Plenum, New York 1975) p. 423

    Google Scholar 

  3. G.A.J. Amaratunga, K. Sabine, A.G.R. Evans: IEEE Trans. ED-32, 1889 (1985)

    Google Scholar 

  4. H. Ryssel, J. Lorenz, K. Hoffmann: Appl. Phys. A 41, 201 (1986)

    Google Scholar 

  5. H. Ryssel, L. Gong, J. Lorenz: In: Proc. 1989 International Symposium on VLSI Technology, Systems and Applications, Taipeh, May 17–19, 1989

  6. R.J. Wierzbicki, J. Lorenz, A. Barthel: Proc. ESSDERC '89, 19th European Solid State Device Research Conference, ed. by A. Heuberger, H. Ryssel, P. Lange (Springer, Berlin, Heidelberg 1989) p. 193

    Google Scholar 

  7. J.F. Ziegler, J.P. Biersack, U. Littmark: The Stopping and Range of Ions in Solids (Pergamon, New York 1985)

    Google Scholar 

  8. W. Takeuchi, Y. Yamamura: Radiat. Eff. 71, 53 (1983)

    Google Scholar 

  9. M.T. Robinson, I.M. Torrens: Phys. Rev. B 9, 5008 (1974)

    Google Scholar 

  10. M. Posselt: In: Proc. EPM '89, 3rd International Conference on Energy Pulse and Particle Modification of Materials, Dresden, September 4–8, 1989

  11. K.B. Winterbon, P. Sigmund, J.B. Sanders: Kong. Danske Vid. Selsk., mat.-fys. Medd. 27, No. 14 (1970)

  12. L.A. Christel, J.F. Gibbons, S. Mylroie: J. Appl. Phys. 51, 6176 (1980)

    Google Scholar 

  13. G. Thäter: Diploma Thesis, TU Dresden, 1987 (unpublished)

  14. D.K. Brice: Nucl. Instrum. Methods B 17, 289 (1986)

    Google Scholar 

  15. R.P. Webb, E. Maydell: Nucl. Instrum. Methods B 33, 117 (1988)

    Google Scholar 

  16. T. Feudel, S. Ulbricht, A. Hürrich, H.U. Jäger, R. Stephan: TESIM-3 (VEB Forschungszentrum Mikroelektronik Dresden 1988) (unpublished report)

  17. D.A. Antoniadis, S.E. Hansen, R.W. Dutton: IEEE Trans. Ed-26, 490 (1979)

    Google Scholar 

  18. W.D. Wilson, L.G. Haggmark, J.P. Biersack: Phys. Rev. B 15, 2458 (1977)

    Google Scholar 

  19. M. Moulavi-Kakhi, D.G. Ashworth: J. Phys. C 18, 1135 (1985)

    Google Scholar 

  20. F. Jahnel, H. Ryssel, G. Prinke, K. Hoffmann, K. Müller, J. Biersack, R. Henkelmann: Nucl. Instrum. Methods 182/183, 223 (1981)

    Google Scholar 

  21. A. Stolmejer, W.C.E. Snels, P.R. Boudewijn, G.M. Fontijn: J. Electrochem. Soc. 135, 2305 (1988)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Central Institute for Nuclear Research, Academy of Sciences of the GDR, Rossendorf, PF 19, DDR-8051, Dresden, Germany

    M. Posselt

  2. Betrieb des Kombinates VEB Carl Zeiss Jena, VEB Forschungszentrum Mikroelektronik Dresden, Grenzstrasse 28, PF 34, DDR-8080, Dresden, Germany

    T. Feudel & G. Thäter

Authors
  1. M. Posselt
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. T. Feudel
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. G. Thäter
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Posselt, M., Feudel, T. & Thäter, G. Simulation of range profiles for boron implantation into SiO2/Si and Si3N4/SiO2/Si targets. Appl. Phys. A 51, 1–5 (1990). https://doi.org/10.1007/BF00324457

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00324457

PACS

Search

Navigation