Abstract
Microprobe photoluminescence (PL) measurements at 77 K were used to study the effect of the GaAs layer thickness on optical quality and variations in strain in GaAs/Si containing microcracks. PL peak intensities increase with the increase in thickness of GaAs layers and the peak intensity for the 5.5 μm GaAs layer was a factor of 20 higher than those for the 1–2 μm GaAs layers. Spatial nonuniformities in strain in the vicinity of two microcracks reveal that stress was almost released at the intersection of two microcracks and is maximum half way between two microcracks.
Similar content being viewed by others
References
See, for example: Heteroepitaxy on Silicon, MRS Symposia Proceedings, ed. by F.C.C. Fan, J.M. Poate (Materials Research Soc., Pittsburgh, PA 1986) Vol. 67
T.C. Chong, C.G. Fonstad: Appl. Phys. Lett 51, 221 (1987)
R.J. Matyi, J.W. Lee, H.F. Schaake: J. Electron. Mater. 17, 87 (1988)
S.M. Vernon, V.E. Haven, S.P. Tobin, R.G. Wolfson: J. Crystal Growth 77, 490 (1986)
S.J. Pearton, S.M. Vernon, C.R. Abernathy, K.T. Short, R. Caruso, M. Stavola, T.M. Gibson, V.E. White, D.C. Jacobson: J. Appl. Phys. 62, 862 (1987)
J.P. van der Ziel, R.D. Dupuis, R.A. Logan, C.J. Pinzone: Appl. Phys. Lett. 51, 89 (1987)
H.-S. Kim, Y. Kim, M.-S. Kim, S.-K. Min: J. Korean Phys. Soc. 21, 288 (1988)
J.W. Lee: In: Gallium Arsenide and Related Compounds 1986, ed. by W.T. Lindley, Inst. Phys. Conf. Ser. No. 83 (IOP, Bristol 1987) pp. 111–116
B.G. Yacobi, S. Zemon, P. Norris, C. Jagannath, P. Sheldon: Appl. Phys. Lett. 51, 2236 (1987)
B.G. Yacobi, C. Tagannath, S. Zemon, P. Sheldon: Appl. Phys. Lett. 52, 555 (1988)
H.-S. Kim, Y. Kim, M.-S. Kim, S.-K. Min: J. Crystal Growth 92, 507 (1988)
M.S. Kim, S.-K. Min, J.C. Chun: J. Crystal Growth 74, 21 (1988)
M. Takai, J. Tsuchimoto, J. Tokuda, N. Nakai, K. Gamo, S. Namba: Appl. Phys. A 45, 305 (1988)
W. Stolz, F.E.G. Guimataes, K. Ploog: J. Appl. Phys. 63, 492 (1988)
D.S. Wuu, R.H. Horng, M.K. Lee: Appl. Phys. Lett. 54, 2244 (1989)
C.P. Kuo, S.K. Vong, R.M. Cohen, G.B. Stringfellow: J. Appl. Phys. 57, 5428 (1985)
G.E. Pikus, G.L. Bir: Sov. Phys. Solid State 1, 136 (1959)
F.H. Pollak, M. Cardona: Phys. Rev. 172, 816 (1968)
A. Gavini, M. Cardona: Phys. Rev. B 1, 672 (1970)
F.S. Hickernell, W.R. Gayton: J. Appl. Phys. 37, 462 (1966)
R. Bendorius, A. Shileika: Solid State Commun. 8, 1111 (1970)
Author information
Authors and Affiliations
Additional information
On leave from Semiconductor Materials Lab., Korea Institute of Science and Technology (KIST)
Rights and permissions
About this article
Cite this article
Kim, HS., Lee, C., Takai, M. et al. Microprobe photoluminescence measurement on heteroepitaxial GaAs on Si grown by metalorganic chemical vapor deposition. Appl. Phys. A 52, 188–191 (1991). https://doi.org/10.1007/BF00324416
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00324416