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Surfactant-mediated molecular beam epitaxy of high-quality (111)B-GaAs

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Abstract

We present a novel approach to the molecular beam epitaxy of [111]-oriented GaAs. Surface-segregating In employed as an isoelectronic surfactant allows us to achieve mirror-like (111) GaAs surfaces within a wide range of growth conditions. Scanning electron and atomic force microscopy confirm the excellent morphology of the resulting samples. High-resolution X-ray diffraction shows the incorporation of In into the films to be negligible. Finally, we demonstrate a 10 Å-In0.2Ga0.8As/300 Å-GaAs superlattice based on surfactant-grown GaAs with a photoluminescence linewidth as narrow as 4.2 meV.

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Author notes

  1. K. Ploog

    Present address: Paul-Drude-Institut für Halbleiterelektronik, O-1086, Berlin, Germany

Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, W-7000, Stuttgart 80, Germany

    M. Ilg, D. Eißler, C. Lange & K. Ploog

Authors
  1. M. Ilg
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  2. D. Eißler
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  3. C. Lange
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  4. K. Ploog
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Ilg, M., Eißler, D., Lange, C. et al. Surfactant-mediated molecular beam epitaxy of high-quality (111)B-GaAs. Appl. Phys. A 56, 397–399 (1993). https://doi.org/10.1007/BF00324362

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  • DOI: https://doi.org/10.1007/BF00324362

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