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Electrical properties of polyimide on n-GaAs (100) interfaces by a pulsed laser evaporation technique

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Abstract

Incorporation of a thin insulating layer of polymer-like polyimide deposited by pulsed laser evaporation technique between metal and n-GaAs has resulted in diode structures with MIS and Schottky-barrier-type capacitance-voltage and current-voltage characteristics. These structures have the potential to be useful in improving the performance of GaAs FETs for microwave and high-speed applications.

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Authors and Affiliations

  1. Material Science Group, Physical and Inorganic Chemistry Division, Indian Institute of Chemical Technology, 500 007, Hyderadad, India

    G. N. Chaudhari & V. J. Rao

Authors
  1. G. N. Chaudhari
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  2. V. J. Rao
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IICT communication No. 2934

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Chaudhari, G.N., Rao, V.J. Electrical properties of polyimide on n-GaAs (100) interfaces by a pulsed laser evaporation technique. Appl. Phys. A 56, 353–354 (1993). https://doi.org/10.1007/BF00324355

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  • DOI: https://doi.org/10.1007/BF00324355

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