Abstract
We report the results of picosecond photoconductivity measurements in photosensitive electrolytically deposited PbS and vacuum evaporated PbTe polycrystalline films. We determine Auger recombination to be the prevailing carrier recombination mechanism in highly excited PbTe and PbS films and found Auger coefficients ⋎A≈5×10−28 cm6 s−1 for PbTe and ⋎A≈5.3×10−29 cm6 s−1 for PbS for carrier concentration changes ΔN>1018 cm−3. The results indicate that the low mobility values are controlled by intergrain carrier scattering. We have studied the thermal annealing influence on picosecond photoconductivity of the films.
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