Formation of Ohmic contacts to n-GaAs using ion beam mixing of Tellurium

Abstract

Ohmic contacts were formed on n-GaAs using thin evaporated layers of Te followed by bombardment of 100 keV Ar⁺ ions. The specific contact resistance σ_c showed a strong dependence on the ion dose in the range 10¹⁴ to 10¹⁶ ions cm⁻², with higher doses leading to progressively lower specific contact resistance. The substrate temperature during ion bombardment was varied in the range from 25 to 200° C and was found to have only a minor effect on the resultant values of σ_c. Elevated temperature aging of the Ohmic contacts at 200° C resulted in a progressive increase in the specific contact resistance, independent of either the ion dose or the substrate temperature used for ion beam mixing. Rutherford backscattering studies (RBS) indicate that the Ohmic contact behaviour was due to the in-diffusion of Te and subsequent formation of a heavily doped n ⁺ layer at the Te-GaAs interface.