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Investigation of ruthenium Schottky contacts to n-GaAs

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Abstract

Ruthenium was evaporated on n-GaAs to form Schottky contacts. Initial electrical measurements revealed a near ideal Schottky behaviour with low leakage currents. The Schottky diodes exhibit good stability upon thermal aging at elevated temperatures up to 300° C. However, the diode parameters rapidly deteriorate after aging at temperatures in excess of 400° C. The room temperature (300 K) median life of the diodes, based on a failure criterion of a tenfold increase in the diode saturation current, J sriv , from reverse bias current-voltage (I–V) data, was of the order of 104 h.

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  1. K. Prasad

    Present address: School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 2263, Singapore

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  1. Department of Electrical & Electronic Engineering, The University of Western Australia, 6009, Nedlands, WA, Australia

    K. Prasad

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Prasad, K. Investigation of ruthenium Schottky contacts to n-GaAs. Appl. Phys. A 54, 493–496 (1992). https://doi.org/10.1007/BF00324326

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  • DOI: https://doi.org/10.1007/BF00324326

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