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Model of laser-induced chemical etching of silicon in chlorine atmosphere

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Abstract

A mathematical model for the chemical etching of silicon in a chlorine atmosphere induced by laser irradiation is described. The model takes into account: dissociation of molecules having absorbed radiant energy into chlorine atoms and their diffusion onto the substrate surface, generation of photocarriers in the silicon substrate, kinetics of chlorine atom chemisorption on the silicon surface, chemical reaction of chemisorbed chlorine atoms with silicon atoms, and desorption of reaction products. The obtained results are compared with experimental data.

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  1. Minsk Radioengineering Institute, P. Brovki 6, 220600, Minsk, Republic of Byelorussia

    I. P. Sytov

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  1. I. P. Sytov
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Sytov, I.P. Model of laser-induced chemical etching of silicon in chlorine atmosphere. Appl. Phys. A 55, 372–377 (1992). https://doi.org/10.1007/BF00324087

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  • DOI: https://doi.org/10.1007/BF00324087

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