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Diffusion-deformational instability and subboundary formation in the recrystallization of semiconductor-on-insulator films

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Abstract

A novel (defect-deformational) mechanism for subboundary formation in laser beam recrystallization of semiconductor films is proposed. The theory is developed yielding explicit analytical expressions for the distance between subboundaries as a function of film thickness and the scanning velocity of the laser beam. The theoretical results obtained agree well with the experimental results.

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Authors and Affiliations

  1. International Laser Centre, Moscow State University, SU-119899, Moscow, Leninskie gory, USSR

    V. I. Emel'yanov

  2. Institute of Crystallography, USSR Academy of Sciences, SU-117333, Moscow, USSR

    A. A. Soumbatov

Authors
  1. V. I. Emel'yanov
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  2. A. A. Soumbatov
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Emel'yanov, V.I., Soumbatov, A.A. Diffusion-deformational instability and subboundary formation in the recrystallization of semiconductor-on-insulator films. Appl. Phys. A 54, 196–199 (1992). https://doi.org/10.1007/BF00323911

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  • DOI: https://doi.org/10.1007/BF00323911

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