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Liquid phase epitaxy

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Abstract

This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and solid-liquid phase diagrams are treated in detail. In Sect. 2 technological aspects and various kind of growth systems including industrial versions are described. Section 3 summarizes the relevant properties of LPE grown layers. Section 4 contains the application of LPE to the material system InP/InGaAs/InGaAsP as a model system. In Sect. 5 the advantages and weaknesses of LPE with respect to device applications in comparison with competing methods are discussed, and finally we attempt to predict the future direction of LPE.

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  1. Forschungsinstitut, Deutsche Bundespost Telekom, P.O. Box 10 00 03, W-6100, Darmstadt, Fed. Rep. Germany

    E. Kuphal

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Kuphal, E. Liquid phase epitaxy. Appl. Phys. A 52, 380–409 (1991). https://doi.org/10.1007/BF00323650

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