Skip to main content
SpringerLink
Log in

Contribution to the characterization of reference materials for thin-film analysis in solar-energy and semiconductor technologies

  • Short Communications
  • Published:
Fresenius' Journal of Analytical Chemistry Aims and scope Submit manuscript

Abstract

A combined approach of independent surface and bulk analytical methods was applied to characterize materials that had been prepared by ion implantation of P. Co and Ni ions into high purity silicon, for use as reference materials in thin-film analysis techniques. In this characterization, high precision and accuracy of 1–2% were obtained by utilizing instrumental neutron activation analysis for the determination of the total implanted ion dose. The impact of the analytical results on the preparation procedure is discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

References

  1. Grasserbauer M, Werner HW (1991) Analysis of microelectronic materials and devices. Wiley, Chichester New York Brisbane, pp 934

    Google Scholar 

  2. Kolbesen BO, Pamler W (1989) Fresenius Z Anal Chem 333:561–568

    Google Scholar 

  3. Bubert H, Garten RPH, Stingeder S, Wätjen U (1988) Surf Interface Anal 12:439

    Google Scholar 

  4. Bubert H, Palmetshofer L, Stingeder G, Wielunski M (1991) Anal Chem 63:1562–1570

    Google Scholar 

  5. Garten RPH, Bubert H, Palmetshofer L (1992) Anal Chem 64:1100–1105

    Google Scholar 

  6. Klockenkämper R, Becker M, Bubert H, Burba P (1990) Anal Chem 62:1674–1676

    Google Scholar 

  7. Garten RPH, Bubert H, Palmetshofer L (1992) Surf Interface Anal 19:211–216

    Google Scholar 

  8. Garten RPH (1992) Fresenius J Anal Chem 343:794–796

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Labor für Reinststoffanalytik, Max-Planck-Institut für Metallforschung, Bunsen-Kirchhoff-Strasse 13, D-44139, Dortmund, Germany

    R. P. H. Garten

  2. Institut für Spektrochemie und angewandte Spektroskopie, Bunsen-Kirchhoff-Strasse 11, D-44139, Dortmund, Germany

    H. Bubert

  3. Institut für Experimentalphysik, Johannes-Kepler-Universität, Linz, Austria

    L. Palmetshofer

  4. Institute of Physics, Rostow State University, Rostow on Don, Russia

    V. M. Korol

Authors
  1. R. P. H. Garten
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. H. Bubert
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. L. Palmetshofer
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. M. Korol
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Garten, R.P.H., Bubert, H., Palmetshofer, L. et al. Contribution to the characterization of reference materials for thin-film analysis in solar-energy and semiconductor technologies. Fresenius J Anal Chem 349, 176–177 (1994). https://doi.org/10.1007/BF00323260

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00323260

Keywords

Search

Navigation