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Structural investigations of silicon-rich CVD-SiC

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Abstract

Silicon Carbide (SiC) and Silicon Carbide with free Silicon [SiC(Si)] thin films were prepared by chemical vapor deposition (CVD) using an CH3SiCl3-H2-Ar gas mixture at temperatures of 1173 to 1323 K. The structure of these films were investigated by scanning electron microscopy (SEM) and X-ray diffractometry (XRD). The effects of crystallinity, morphology and Si-concentration of the deposits were examinated in some detail.

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Authors and Affiliations

  1. Department of Chemistry, Technical University Chemnitz-Zwickau, D-09009, Chemnitz, Germany

    J. Neuhäuser, H. Plänitz & W. Wagner

Authors
  1. J. Neuhäuser
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  2. H. Plänitz
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  3. W. Wagner
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Neuhäuser, J., Plänitz, H. & Wagner, W. Structural investigations of silicon-rich CVD-SiC. Fresenius J Anal Chem 349, 162–163 (1994). https://doi.org/10.1007/BF00323251

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  • DOI: https://doi.org/10.1007/BF00323251

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