Abstract
The emission of MCs+ molecular ions sputtered by Cs+ ion impact from a variety of elemental (Si and Ge) and compound (GaAs, InP, InSb, ZnSe, CdS, CdSe, CdTe and CdZnTe) semiconductors and a selection of glass samples of different composition has been investigated. For the glass samples a set of relative sensitivity factors has been determined which are largely composition-independent and provide the possibility of a reliable quantification of glasses by MCs+ SIMS. For the semiconductors fractional ion yields (i.e. the number of detected MCs+ ions per sputtered M atom) range from 10−6 to some 10−4 and exhibit little variation with the oxygen surface coverage of the specimen. Depending on M, the emission of MOCs+ molecular species becomes prominent (or even dominating) at high oxygen concentrations. Furthermore, total sputtering yields for 5.5 keV Cs+ impact and different oxygen partial pressures have been determined from sputtered craters.
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Haag, M., Gnaser, H. & Oechsner, H. MCs+ secondary ion and sputtering yields of oxygen-exposed semiconductors and glasses. Fresenius J Anal Chem 353, 565–569 (1995). https://doi.org/10.1007/BF00321324
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DOI: https://doi.org/10.1007/BF00321324