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Modelling the dielectric function of thin films measured by spectroscopic ellipsometry: determination of microstructure and density

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Abstract

The dielectric function of thin-film amorphous hydrogenated silicon (a-Si:H) deposited by the glow discharge and hot wire technique has been investigated by spectroscopic ellipsometry. An improved interpretation of the ellipsometric data taking into account the influence of hydrogen incorporation into the amorphous network enables to determine the film density and the void volume fraction of the material. Thus ellipsometry provides a convenient and contactless means of characterizing the structural properties of thin films. The film density varies considerably with substrate temperature and hydrogen content depending on the individual deposition technique. A reduction of film density is mainly caused by the formation of voids in the amorphous network. The influence of the substrate temperature on the growth of dense a-Si: H films is pointed out.

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Author notes

  1. T. Haage

    Present address: Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569, Stuttgart, Germany

  2. U. I. Schmidt

    Present address: Department of Chemical Engineering, University of California at Berkeley, 94720-1462, Berkeley, CA, USA

Authors and Affiliations

  1. Fachbereich Physik und Forschungsschwerpunkt Materialwissenschaften der Universität Kaiserslautern, Postfach 3049, D-67653, Kaiserslautern, Germany

    T. Haage, U. I. Schmidt, B. Schröder & H. Oechsner

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  1. T. Haage
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  2. U. I. Schmidt
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  3. B. Schröder
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  4. H. Oechsner
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Haage, T., Schmidt, U.I., Schröder, B. et al. Modelling the dielectric function of thin films measured by spectroscopic ellipsometry: determination of microstructure and density. Fresenius J Anal Chem 353, 556–558 (1995). https://doi.org/10.1007/BF00321322

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  • DOI: https://doi.org/10.1007/BF00321322

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