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Quantitative characterization of dislocation density in α-SiC crystals after high-pressure sintering in Si3N4 matrix

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Materials Science, Toyohashi University of Technology, Tempaku-cho, Hibarigaoka 1-1, 441, Toyohashi, Japan

    G. Pezzotti

  2. Institut fur Materialforschung, Universitat Bayreuth, Ludwig-Thoma Strasse 368, D-95440, Bayreuth, Germany

    H. -J. Kleebe

Authors
  1. G. Pezzotti
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  2. H. -J. Kleebe
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Pezzotti, G., Kleebe, H.J. Quantitative characterization of dislocation density in α-SiC crystals after high-pressure sintering in Si3N4 matrix. J Mater Sci Lett 15, 500–504 (1996). https://doi.org/10.1007/BF00275413

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  • DOI: https://doi.org/10.1007/BF00275413

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