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Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition, Part III: 0.78 and 0.84 eV photoluminescence emissions

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Laboratory of Excited State Processes, Changchun Institute of Physics, Chinese Academy of Sciences, 130021, Changchun, People's Republic of China

    J. L. Zhao, Y. Gao, X. Y. Liu, K. Dou, S. H. Huang & J. Q. Yu

  2. Department of Basic Sciences, Civil Aviation Institute of China, 300300, Tianjin, People's Republic of China

    J. C. Liang

  3. Xi'an Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 710068, Xi'an, People's Republic of China

    H. K. Gao

Authors
  1. J. L. Zhao
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  2. Y. Gao
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  3. X. Y. Liu
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  4. K. Dou
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  5. S. H. Huang
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  6. J. Q. Yu
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  7. J. C. Liang
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  8. H. K. Gao
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Zhao, J.L., Gao, Y., Liu, X.Y. et al. Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition, Part III: 0.78 and 0.84 eV photoluminescence emissions. J Mater Sci Lett 14, 1004–1006 (1995). https://doi.org/10.1007/BF00274632

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  • DOI: https://doi.org/10.1007/BF00274632

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