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Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition

Part IV: 0.96 eV photoluminescence emission

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Basic Sciences, Civil Aviation Institute of China, 300 300, Tianjin, People's Republic of China

    Jiachang Liang

  2. Laboratory of Excited State Processes, Changchun Institute of Physics, Chinese Academy of Sciences, 130 021, Changchun, People's Republic of China

    Jialong Zhao, Ying Gao, Kai Dou, Shihua Huang & Jiaqi Yu

  3. Xi'an Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 710 068, Xi'an, People's Republic of China

    Hongkai Gao

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  1. Jiachang Liang
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  2. Jialong Zhao
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  3. Ying Gao
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  4. Kai Dou
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  5. Shihua Huang
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  7. Hongkai Gao
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Liang, J., Zhao, J., Gao, Y. et al. Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition. J Mater Sci Lett 15, 189–191 (1996). https://doi.org/10.1007/BF00274447

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  • DOI: https://doi.org/10.1007/BF00274447

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