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High resolution electron microscopy study of nickel silicide — silicon interface grown by molecular beam epitaxy

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Journal of Materials Science Letters

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Feng, Y.Z., Wu, Z.Q. High resolution electron microscopy study of nickel silicide — silicon interface grown by molecular beam epitaxy. J Mater Sci Lett 15, 2000–2001 (1996). https://doi.org/10.1007/BF00274361

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  • DOI: https://doi.org/10.1007/BF00274361

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