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Hole transport in polyorganosilicon thin films

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Summary

Hole transport in plasma — polymerized organosilicon films has been investigated. Measurements of the stationary conductivity dependence on temperature and applied electrical field and mobility determination by time of flight method were carried out. It was shown that holes can be transported either by states laying near or in the valence band, or by states near the Fermi level. The first transport mechanism dominates at about room temperature and above and the second one was found only in polysilazane at low temperature. Nitrogen containing structures are proposed as transport states near the Fermi level.

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Authors and Affiliations

  1. Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, PL-90-362, Łódź, Poland

    Jacek Tyczkowski, Jan Sielski & Marian Kryszewski

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  1. Jacek Tyczkowski
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  2. Jan Sielski
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  3. Marian Kryszewski
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Tyczkowski, J., Sielski, J. & Kryszewski, M. Hole transport in polyorganosilicon thin films. Polymer Bulletin 8, 117–124 (1982). https://doi.org/10.1007/BF00263017

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  • DOI: https://doi.org/10.1007/BF00263017

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