Skip to main content
Log in

The relationship between the defects of alpha-Si3N4 whiskers and growth temperature

  • Published:
Journal of Materials Science Letters

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

References

  1. K. R. KARASEK, J. T. DONNER and S. A. BRADLEY, J. Amer. Ceram. Soc. 73 (1990) 102–105.

    Google Scholar 

  2. K. SASAKI, K. KURODA, T. IMURA and H. SAKS, Yopyo-Kyokai Shi 94 (1986) 773–778.

    Google Scholar 

  3. Y. C. ZHOU, X. CHANG, J. ZHOU and F. XIA, J. Mater. Sci. 26 (1991) 3914–3916.

    Google Scholar 

  4. K. S. MAZDIYASNI and C. M. COOKE, J. Amer. Ceram. Soc. 56 (1973) 628–633.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zhang, KH., Xu, GH. & Wu, HW. The relationship between the defects of alpha-Si3N4 whiskers and growth temperature. J Mater Sci Lett 14, 700–704 (1995). https://doi.org/10.1007/BF00253376

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00253376

Keywords

Navigation