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Investigation of whisker defects on molecular beam epitaxy grown GaAs layers

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Applied Physics, De Montfort University, The Gateway, LE1 9BE, Leicester, UK

    N. J. Kadhim

  2. Physical Electronics Group, SEEIE, South Bank University, 103 Borough Road, SE1 OAA, London, UK

    D. Mukherjee

Authors
  1. N. J. Kadhim
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  2. D. Mukherjee
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Kadhim, N.J., Mukherjee, D. Investigation of whisker defects on molecular beam epitaxy grown GaAs layers. J Mater Sci Lett 15, 1330–1331 (1996). https://doi.org/10.1007/BF00240797

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  • DOI: https://doi.org/10.1007/BF00240797

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