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Localized melting induced by rapid annealing correlated with the space distribution of A type microdefects in silicon Czochralski-grown wafers

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Abstract

It is shown that when a standard polished single-crystalline silicon wafer is heated uniformly by light pulses from a xenon flashlamp, anisotropic melting at localized places is caused by nucleation in the bulk and the melting nuclei are A-type microdefects.

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  1. ROTOR, 8, Sumgaitska Street, Zip code 257036, Cherkasy, Ukraine

    A. Y. Usenko

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  1. A. Y. Usenko
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Usenko, A.Y. Localized melting induced by rapid annealing correlated with the space distribution of A type microdefects in silicon Czochralski-grown wafers. J Mater Sci: Mater Electron 4, 89–92 (1993). https://doi.org/10.1007/BF00226641

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  • DOI: https://doi.org/10.1007/BF00226641

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