Abstract
The agglomeration process that occurs during annealing of thin Fe films (<200 nm) on Si substrates has been studied. Agglomeration occurred on uncapped films prior to silicide formation. Capping layers of SiO2, or more appropriately Si-SiO2, have been used to minimize agglomeration effects. Continuous thin films of β-FeSi2 have been grown on 〈11 1〉 and 〈 100 〉 oriented substrates. Preferred growth of (202) and (220) suicide planes on 〈111〉 Si has been obtained, while preferential growth was not observed on 〈100〉 Si.
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Snell, D., Ivey, D.G. Agglomeration problems in the formation of FeSi2 from Fe-Si thin-film couples. J Mater Sci: Mater Electron 4, 47–54 (1993). https://doi.org/10.1007/BF00226633
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DOI: https://doi.org/10.1007/BF00226633