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Electrical behaviour of the MnO2-doped ZnO-Bi2O3 system

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Abstract

The electrical behaviour of xwt% MnO2-(100-x) (95wtx% ZnO-5wt% Bi2O3) is investigated. Addition of MnO2 retards grain growth in the ZnO-Bi2O3 system. It is observed that the MnO2 dopant decreases the leakage current, while it increases the non-linearity coefficient and the grain boundary resistance of ZnO-Bi2O3 ceramics. In addition, the noise spectrum of MnO2-doped ZnO-Bi2O3 deviates from 1/f behaviour. The deviation is, however, less enhanced for samples with more MnO2 dopant.

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Authors and Affiliations

  1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan

    Bi-Shiou Chiou & Ming-Chih Chung

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  1. Bi-Shiou Chiou
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  2. Ming-Chih Chung
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Chiou, BS., Chung, MC. Electrical behaviour of the MnO2-doped ZnO-Bi2O3 system. J Mater Sci: Mater Electron 4, 38–42 (1993). https://doi.org/10.1007/BF00226631

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  • DOI: https://doi.org/10.1007/BF00226631

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