Skip to main content
SpringerLink
Log in

Carbon-impurity incorporation during the growth of epitaxial group III–V materials

  • Review
  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

This paper is a review of the incorporation and behaviour of carbon in group III–V materials. Both vapour phase epitaxy and growth in ultra high-vacuum environments are covered. Particular attention is given to the factors which influence the carbon-uptake rate such as the growth temperature, ratio of group V to group III materials and parasitic interaction with other species at the growth front. Among the latter, the role of hydrogen is crucial not only to the understanding of the incorporation of carbon but also to its behaviour in the lattice. Consequently, this issue is thoroughly discussed for both growth methods. Potential sources for the introduction of carbon to the growth front are also compared in the light of their utility for obtaining high well-confined acceptor profiles, such as are required in the latest-generation electronic and photonic devices. Finally, the material quality and dopant stability which can be obtained with carbon-doped materials will be briefly reviewed and, where possible, contrasted with that which can be obtained with other p-type dopants.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. P. D. DAPKUS, H. M. MANASEVIT, K. L. HESS, T. S. LOW and G. E. STILLMAN, J. cryst. Growth 55 (1981) 10.

    Google Scholar 

  2. J. R. SHEALY, V. G. KREISMANIS, D. K. WAGNER, G. W. WICKS, W. J. SCHAFF, Z. Y. YU, J. M. BALLANTYNE, L. F. EASTMAN and R. GRIFFITHS, Inst. Phys. Conf. Ser. 65 (1983) 109.

    Google Scholar 

  3. T. F. KUECH and E. VEUHOFF, J. Cryst. Growth 68(1984) 148.

    Google Scholar 

  4. J. VAN DE VEN, H. G. SCHOOT and L. J. GILING, J. Appl. Phys. 60 (1986) 1648.

    Google Scholar 

  5. G. ARENS, M. HEYEN, H. LÜTH and P. BALK, Thin Solid Films 136 (1986) 281.

    Google Scholar 

  6. T. F. KUECH, G. J. SCILLA and F. CARDONE, J. Cryst. Growth 93 (1988) 550.

    Google Scholar 

  7. G. ARENS, H. HEINECKE, N. PÜTZ, H. LÜTH and P. BALK, ibid. 76 (1986) 305.

    Google Scholar 

  8. S. P. DENBAARS, B. Y. MAA, P. D. DAPKUS, A. D. DANNER and H. C. LEE, ibid. 77 (1986) 188.

    Google Scholar 

  9. C. A. LARSEN, N. I. BUCHAN and G. B. STRINGFELLOW, ibid. 77 (1986) 188.

    Google Scholar 

  10. Idem.Appl. Phys. Lett. 52 (1988) 480.

    Google Scholar 

  11. M. KUSHIBE, K. EGUCHI, M. FUNAMIZU and Y. OHBA. ibid. 56 (1990) 1248.

    Google Scholar 

  12. S. -II. KIM, K. S. EOM, Y. KIM, M. -S. KIM, S. -K. MIN, C. LEE, M. H. KWAK and D. S. MA, 126 (1993) 441.

  13. R. PEÑA-SIERRA, J. G. CASTRO-ZAVALA and A. Eupscobosa, J. Cryst. Growth 107 (1991) 337.

    Google Scholar 

  14. H. HARDTDEGEN, M. HOLLFELDER, R. MEYER, R. CARIUS, H. MÜNDER, S. FROHNHOFF, D. SZYNKA and H. LÜTH, ibid. 124 (1992) 420.

    Google Scholar 

  15. P. LEE, D. MCKENNA, D. KAPUR and K. F. JENSEN, ibid. 77 (1986) 120.

    Google Scholar 

  16. D. W. VOOK, S. REYNOLDS and T. F. GIBBONS, Appl. Phys. Lett. 50 (1987) 1386.

    Google Scholar 

  17. R. M. LUM, J. K. KLINGERT, D. W. KISKER, D. M. TENNANT, M. D. MORRIS, D. L. MALM, J. KOVALCHICK and L. A. HEIMBROOK, J. Electron. Mater. 17 (1988) 101.

    Google Scholar 

  18. T. F. KUECH, M. A. TISCHLER, P. -J. WANG, G. SCILLA, R. POTEMSKI and F. CARDONE, Appl. Phys. Lett. 53 (1988) 1317.

    Google Scholar 

  19. T. KOBAYASHI and N. INOUE, J. Cryst. Growth 102 (1990) 183.

    Google Scholar 

  20. H. J. MOON, T. G. STOEBE and B. K. CHADWICK, J. Electron. Mater. 19 (1990) 1351.

    Google Scholar 

  21. G. NEUMANN, Th. LAUTERBACH, M. MAIER and K. H. BACHEM, Inst. Phys. Conf. Ser. 112 (1990) 167.

    Google Scholar 

  22. M. SHIMAZU, H. KIMURA, K. KAMOR, T. SHIRAK-AWA, S. MURAI and K. TADA, ibid 112 (1990) 173.

    Google Scholar 

  23. M. KONAGAI, T. YAMADA, T. AKATSUKA, K. SAITO, E. TOKUMITU and K. TAKAHASHI, J. Cryst. Growth 98 (1989) 167.

    Google Scholar 

  24. J. A. MCCAULLEY, V. R. MCCRARY and V. M. DONNELLY, J. Phys. Chem. 93 (1989) 1148.

    Google Scholar 

  25. D. M. SPECKMAN and J. P. WENDT, Appl. Phys. Lett. 50 (1987) 676.

    Google Scholar 

  26. A. BRAUERS, O. KAYSER, R. HALL, H. HEINECKE, P. BALK and H. HOFMANN, J. Cryst. Growth 93 (1988) 7.

    Google Scholar 

  27. K. PAK, K. ASHIZUKA, H. FUKAZAWA, S. YAMASHITA, Y. TAKANO and H. YONEZU, ibid. 106 (1990) 715.

    Google Scholar 

  28. M. A. TISCHLER, R. M. POTEMSKI, T. F. KUECH, F. CARDONE, M. S. GOORSKY and G. SCILLA, ibid. 107 (1991) 268.

    Google Scholar 

  29. T. SUNTOLA and M. ANTSON, US Patent 4058430 (1977).

  30. T. SUNTOLA and J. HYVÄRINEN, Ann. Rev. Mater. Sci. 15 (1985) 177.

    Google Scholar 

  31. J. NISHIZAWA, H. ABE and T. KURABAYASHI, J. Electrochem. Soc. 132 (1985) 1197.

    Google Scholar 

  32. M. A. TISCHLER and S. M. BEDAIR, Appl. Phys. Lett. 48 (1986) 1961.

    Google Scholar 

  33. A. DIP, G. M. EELDALLAL, P. C. COLTER, N. HAYAFUJI and S. M. BEDAIR, ibid. 62 (1993) 2378.

    Google Scholar 

  34. K. MOCHIZUKI, M. OZEKI, K. KODAMA and N. OHTSUKA, J. Cryst. Growth 93 (1988) 557.

    Google Scholar 

  35. K. G. REID, H. M. URDIANYK and S. M. BEDAIR, Appl. Phys. Lett. 59 (1991) 2397.

    Google Scholar 

  36. T. F. KUECH, D. J. WOLFORD, E. VEUHOFF, V. DELINE, P. M. MOONEY, R. POTEMSKI and J. BRADLEY J. Appl. Phys. 62 (1987) 632.

    Google Scholar 

  37. W. S. HOBSON, S. J. PEARTON, F. REN, Y. CHENG, D. M. KOZUCH, M. STAVOLA and M. GEVA, Mater. Sci. Eng. B 20 (1993) 266.

    Google Scholar 

  38. K. TAMAMURA, J. OGAWA, K. AKIMOTO, Y. MORI and C. KOJIMA, Appl. Phys. Lett. 50 (1987) 1149.

    Google Scholar 

  39. L. J. GUIDO, G. S. JACKSON, D. C. HALL, W. E. PLANO and N. HOLONYAK JR, ibid. 52 (1988) 522.

    Google Scholar 

  40. Y. ASHIZAWA, T. NODA, K. MORIZUKA, M. ASAKA and M. OBARA, J. Cryst. Growth 107 (1991) 903.

    Google Scholar 

  41. H. ITO and T. MAKIMOTO. Appl. Phys. Lett. 58 (1991) 2770.

    Google Scholar 

  42. J. S. ROBERTS, K. C. SINGH C. C. BUTTON, J. P. R. DAVID and J. WOODHEAD, J. Cryst. Growth 107 (1991) 915.

    Google Scholar 

  43. S. TANAKA, M. ITO, M. IKEDA and T. KIKUTA, ibid. 124 (1992) 812.

    Google Scholar 

  44. B. T. CUNNINGHAM, M. A. HAASE, M. J. MCCOLLUM, J. E. BAKER and G. E. STILLMAN, Appl. Phys. Lett. 54 (1989) 1905.

    Google Scholar 

  45. B. T. CUNNIGNHAM, J. E. BAKER and G. E. STILLMAN, ibid. 56 (1990) 836.

    Google Scholar 

  46. P. M. ENQUIST, Ibid. 57 (1990) 2348.

    Google Scholar 

  47. M. C. HANNA, Z. H. LU, E. W. MAO, T. MCCORMICK, E. G. OH, A. MAJERFIELD and D. M. SZMYD, J. Cryst. Growth 107 (1991) 279.

    Google Scholar 

  48. M. C. HANNA, A. MAJERFELD and D. M. SZMYD, Appl. Phys. Lett. 59 (1991) 2001.

    Google Scholar 

  49. M. C. HANNA, Z. H. LU and A. MAJERFELD, ibid. 58 (1991) 164.

    Google Scholar 

  50. L. W. YANG, P. D. WRIGHT, V. EU, Z. H. LU and A. MAJERFELD, J. Appl. Phys. 72 (1992) 2603.

    Google Scholar 

  51. W. S. HOBSON, Mater. Res. Soc. Symp. Proc. 240 (1992) 45.

    Google Scholar 

  52. W. S. HOBSON, S. J. PEARTON, D. M. KOZUCH and M. STAVOLA, Appl. Phys. Lett. 60 (1992) 3259.

    Google Scholar 

  53. S. A. STOCKMAN, A. W. HANSON and G. E. STILLMAN, ibid. 60 (1992) 2903.

    Google Scholar 

  54. G. E. STILLMAN, S. A. STOCKIMAN, A. W. HANSON, C. M. COLOMB, M. T. FRESINA and S. T. URIBE, Inst. Phys. Conf. Ser. 129 (1992) 687.

    Google Scholar 

  55. A. E. KIBBLER, S. R. KURTZ and J. M. OLSON, J. Cryst. Growth 109 (1991) 258.

    Google Scholar 

  56. B. T. CUNNINGHAM, G. E. STILLMAN and G. S. JACKSON, Appl. Phys. Lett. 56 (1990) 361.

    Google Scholar 

  57. S. L. DELAGE, M. A. Di FORTE-POISSON, H. BLANCK, C. BRYLINSKI, E. CHARTIER and P. COLLOT, Electron. Lett. 28 (1991) 253.

    Google Scholar 

  58. W. S. HOBSON, F. REN, J. LOTHIAN and S. J. PEARTON. Semicond. Sci. Technol. 7 (1992) 598.

    Google Scholar 

  59. T. LAUTERBACH, W. PLETSCHEN and K. H. BACHEM, IEEE Trans. Electron. Dev. 39 (1992) 753.

    Google Scholar 

  60. W. LIU and S.-K. FAN, IEEE Electron Dev. Lett. 13 (1992) 510.

    Google Scholar 

  61. A. W. HANSON, S. A. STOCKMAN and G. E. STILLMAN, ibid. 14 (1993) 25.

    Google Scholar 

  62. I. SZAFRANEK, J. MAJOR JR, B. T. CUNNINGHAM, L. J. GUIDO, N. J. HOLONYAK JR, and G. E. STILLMAN, Appl. Phys. Lett. 57 (1990) 2910.

    Google Scholar 

  63. W. S. HOBSON, Mater. Res. Soc. Symp. Proc. 300 (1993) 75.

    Google Scholar 

  64. R. B. BYLSMA, W. S. HOBSON, M. GEVA, D. TREVOR and S. J. PEARTON (unpublished).

  65. W. S. HOBSON, A. ZUSSMAN, J. DE JONG and B. F. LEVINE, Mater. Res. Soc. Symp. Proc. 240 (1992) 569.

    Google Scholar 

  66. W. S. HOBSON, A. ZUSSMAN, B. F. LEVINE, J. De. JONG, M. GEVA and L. C. LUTHER, J. Appl. Phys. 71 (1992) 3642.

    Google Scholar 

  67. G. R. ANTELL, A. T. R. BRIGGS, B. R. BUTLER, S. A. KITCHING, J. P. STAGG, A. CHEW and D. E. SYKES, Appl. Phys. Lett. 53 (1988) 758.

    Google Scholar 

  68. S. COLE, J. S. EVANS, M. J. HARLOW, A. W. NELSON and S. WONG, Electron. Lett. 24 (1988) 929.

    Google Scholar 

  69. B. CLERJAUD, F. GENDRON, M. KRAUSE and W. ULRICI, Phys. Rev. Lett. 65 (1990) 1800.

    Google Scholar 

  70. D. M. KOZUCH, M. STAVOLA, S. J. PEARTON, C. R. ABERNATHY and J. LOPATA, Appl. Phys. 57 (1990) 2561.

    Google Scholar 

  71. K. WOODHOUSE, R. C. NEWMAN, T. J. De LYON, J. M. WOODALL, G. J. SCILLA F. CARDONE, Semicond. Sci. Technol. 6 (1991) 330.

    Google Scholar 

  72. N. PAN, S. S. BOSE, M. H. KIM, G. E. STILLMAN, F. CHAMBERS, G. DEVANE, C. R. ITO and M. FENG, Appl. Phys. Lett. 51 (1987) 596.

    Google Scholar 

  73. B. PAJOT, Hydrogen in semiconductors, edited by M. STUTZMANN and J. CHEVALLIER (North Holland, Amsterdam, 1991) p. 371.

    Google Scholar 

  74. B. CLERJAUD, D. COTE, F. GENDRON, W. -S. HAHN, M. KRAUSE, C. PORTE and W. ULRICI, “Defects in Semiconductors/rd, Vol. 16, edited by G. Davies, G. DeLeo and M. Stavola (Trans. Tech., Zürich, 1992) p. 563.

  75. R. JONES and S. OBERG, Phys. Rev. B 44 (1991) 3673.

    Google Scholar 

  76. W. Y. HAN, Y. LU, H. S. LEE, M. W. COLE, S. N. SCHAUER, R. P. MOERKIRK, K. A. JONES and L. W. YANG, Appl. Phys. Lett. 61 (1992) 87.

    Google Scholar 

  77. D. M. KOZUCH, M. STAVOLA, S. J. PEARTON, C. R. ABERNATHY, J. LOPATA and W. S. HOBSON, Bull. Amer. Phys. Soc. Series II. 36 (1991) 994.

    Google Scholar 

  78. M. STAVOLA, D. M. KOZUCH, C. R. ABERNATHY and W. S. HOBSON, Advanced III–V compound semiconductor growth, processing, and devices, edited by S. J. PEARTON, D. K. SADANA and J. M. ZAVADA (Materials Research Society Pittsburgh, PA, 1992) p. 75.

  79. M. STAVOLA, D. M. KOZUCH, S. J. PEARTON, C. R. ABERNATHY and W. S. HOBSON, Workshop on Hydrogen Migration in Semiconductors, Haben, Germany, 1991.

  80. S. A. STOCKMAN, G. E. HÖFLER, J. N. BALLIARGEON, K. C. HSIEH, K. Y. CHENG, and G. E. STILLMAN, J. Appl. Phys. 72 (1992) 981.

    Google Scholar 

  81. S. A. STOCKMAN, A. W. HANSON, S. L. JACKSON, J. E. BAKER and G. E. STILLMAN, Appl. Phys. Lett. 62 (1993) 1248.

    Google Scholar 

  82. I. A. VELOARISOA, D. M. KOZUCH, M. STAVOLA, R. E. PEALE, G. D. WATKINS, S. J. Parton, C. R. ABERNATHY and W. S. HOBSON, “Defects in semiconductors”, Vol. 16, edited by G. Davies, G. DeLeo and M. Stavola (Trans. Tech. Zürich, 1992) p. 111.

  83. J. WAGNER, M. MAIER, Th LAUTERBACH, K. H. BACHEM, A. FISCHER, K. PLOOG, G. MÖRSCH and M. KAMP, Phys. Rev. B 45, 9120 (1992).

    Google Scholar 

  84. J. WAGNER, M. MAIER, Th. LAUTERBACH, K. H. BACHEM, M. ASHWIN, R. C. NEWMAN, K. WOODHOUSE, R. NICKLIN and R. R. BRADLEY, Appl. Phys. Lett. 60 (1992) 2546.

    Google Scholar 

  85. K. WOODHOUSE, R. C. NEWMAN, R. NICKLIN, R. R. BRADLEY and M. J. L. SANGSTER, J. Cryst. Growth 120 (1992) 323.

    Google Scholar 

  86. D. M. KOZUCH, M. STAVOLA, S. J. PEARTON, C. R. ABERNATHY and W. S. HOBSON, J. Appl. Phys. 73 (1993) 3716.

    Google Scholar 

  87. G. E. HÖFLER, H. J. HÖFLER, N. HOLONYAK JR, and K. C. HSIEH, ibid. 72 (1992) 5318.

    Google Scholar 

  88. K. WATANABE and H. YAMAZAKI, Appl. Phys. Lett. 60 (1992) 847.

    Google Scholar 

  89. See for example, S. J. PEARTON and N. J. SHAH, in High speed semiconductor devices, edited by S. M. Sze, (Wiley, 1990) 283.

  90. M. B. PANISH, J. Electrochem. Soc. 127 (1980) 2730.

    Google Scholar 

  91. E. VEUHOFF, W. PLETSCHEN, P. BALK and H. LUTH, J. Cryst. Growth 55 (1981) 30.

    Google Scholar 

  92. W. T. TSANG, Appl. Phys. Lett. 45 (1984) 1234.

    Google Scholar 

  93. E. H. C. PARKER, The technology and physics of molecular beam epitaxy (Plenum Press, New York, 1985) and the references therein.

    Google Scholar 

  94. Y. C. PAO, T. HIERL and T. COOPER, J. Appl. Phys. 60 (1986) 201.

    CAS  PubMed  Google Scholar 

  95. P. ENQUIST, J. A. HUTCHBY and T. J. DELYON, ibid. 63 (1988) 4485.

    Google Scholar 

  96. W. S. HOBSON, S. J. PEARTON and A. S. JORDAN, Appl. Phys. Lett. 56 (1990) 1251.

    Google Scholar 

  97. W. T. TSANG, F. S. CHOA and N. T. HA, J. Electron. Mater. 20 (1991) 541.

    Google Scholar 

  98. N. PUTZ, E. VEUHOFF, H. HEINECKE, M. HEYEN, H. LUTH and P. BALK, J. Vacuum Sci. Technol. B 2 (1985) 671.

    Google Scholar 

  99. E. TOKUMITSU, Y. KUDOU, M. KONAGAI and K. TAKAHASHI, Jpn. J. Appl. Phys. 24 (1985) 1189.

    Google Scholar 

  100. M. WEYERS, N. PUTZ, H. HEINECKE, M. HEYEN, H. LUTH and P. BALK, J. Electron. Mater. 15 (1986) 57.

    Google Scholar 

  101. N. PUTZ, H. HEINECKE, M. HEYEN, P. BALK, M. WEYERS, and H. LUTH, J. Cryst. Growth 74 (1986) 292.

    Google Scholar 

  102. M. KONAGAI, T. YAMADA, T. AKATSUKA, S. NOZAKI, R. MIYAKE, K. SAITO, T. FUKAMACHI, E. TOKUMITSU and K. TAKAHASHI, ibid. 105 (1990) 359.

    Google Scholar 

  103. R. MALIK, R. N. NOTTENBERG, E. F. SCHUBERT, J. F. WALKER and R. W. RYAN, Appl. Phys. Lett. 53 (1988) 2661.

    Google Scholar 

  104. C. GIANNINI, A. FISCHER, C. LANGE, K. PLOOG and L. TAPFER, ibid. 61 (1992) 183.

    Google Scholar 

  105. C. GIANNINI, O. BRANDT, A. FISCHER, K. H. PLOOG and L. TAPFER, J. Cryst. Growth 127 (1993) 724.

    Google Scholar 

  106. O. BRANDT, C. GIANNINI, A. FISCHER, K. H. PLOOG and L. TAPFER, Institute of Physics Conference Series Number 129, Ch. 8 (1993)p. 675, and references therein.

  107. M. SHIARAHAMA, K. NAGAO, E. TOKUMITSU, M. KONAGAI and K. TAKAHASHI, (1993) p. 669.

  108. T. J. DELYON N. I. BUCHAN, P. D. KIRCHNER, J. M. WOODWALL, D. T. MCINTURFF, G. J. SCILLA and F. CARDONE, J. Crys. Growth 111 (1991) 564.

    Google Scholar 

  109. T. P. CHIN, P. D. KIRCHNER, J. M. WOODALL and C. W. TU, Appl. Phys. Lett. 59 (1991) 2865.

    Google Scholar 

  110. C. R. AABERNATHY, S. J. PEARTON, F. REN, W. S. HOBSON and P. W. WISK, Proceedings of the National Vacuum Society, Orlando, Nov. 1993, published in J. Vac. Sci. Tech. A.

  111. Idem. C. R. ABERNATHY, S. J. PEARTON, F. REN, W. S. HOBSON and P. W. WISK to be published in J. Appl. Phys.

  112. C. PALMSTROM, B. P. VAN DER GAAG, J. -I. SONG and S. A. SCHWARZ, presented at ICCBE-4, Nara, Japan, July, 1993, to be published in J. Growth.

  113. T. J. DELYON, N. I. BUCHAN, P. D. KIRCHNER, J. M. WOODALL, G. J. SCILLA a F. CARDONE, Appl. Phys. Lett. 58 (1991) 517.

    Google Scholar 

  114. Y. M. HOUNG, S. D. LESTER, D. E. MARS and J. N. MILLER, J. Vac. Sci. Technol. B 11 915 (1993).

    Google Scholar 

  115. B. W. LIANG, T. P. CHIN and C. W. TU, presented at ICCBE-4, Nara, Japan, July, 1993, to be published in J Cryst. Growth.

  116. K. SAITO, E. TOKUMITSU, T. AKATSUKA, M. MIYAUCHI, T. YAMADA, M. KONAGAI and K. TAKAHASHI, J. Appl. Phys. 64 (1988) 3975.

    Google Scholar 

  117. C. R. ABERNATHY, S. J. PEARTON, F. REN, W. S. HOBSON, T. R. FULLOWAN, A. KATZ, A. S. JORDAN and J. KOVALCHICK, J. Cryst. Growth 105 (1990) 375.

    Google Scholar 

  118. C. R. ABERNATHY, ibid. 107 (1991) 982.

    Google Scholar 

  119. C. R. ABERNATHY, P. W. WISK, S. J. PEARTON, F. REN, D. A. BOHLING and G. T. MUHR, ibid. 124 (1992) 64.

    Google Scholar 

  120. K. KIMURA, S. HORIGUCHI, K. KARMON, M. MASHITA, M. MIHARA and M. ISHII, Jpn. J. Appl. Phys. 26 (1987) 419.

    Google Scholar 

  121. T. J. DELYON, J. M. WOODALL, P. D. KIRCHNER, D. T. MCINTURFF, G. J. SCILLA and F. CARDONE, J. Vac. Sci. Technol. B 9 (1991) 136.

    Google Scholar 

  122. J. L. BENCHIMOL, F. ALAOUI, Y. GAO, G. LEROUX, E. V. K. RAO and F. ALEXANDRE, J. Cryst. Growth 105 (1990) 135.

    Google Scholar 

  123. M. KAMP, R. CONTINI, K. WERNER, H. HEINECKE, M. WEYERS, H. LUTH and P. BALK, J. Cryst. Growth 95 (1989) 154.

    Google Scholar 

  124. C. R. ABERNATHY, Institute of Physics Conference Series Number 129, Ch. 8 (1993) p. 663.

  125. D. A. BOHLING, C. R. ABERNATHY and K. JENSEN, presented at ICCBE-4, Nara, Japan, July, 1993, to be published in J. Cryst. Growth.

  126. C. R. ABERNATHY and D. A. BOHLING, unpublished.

  127. J. A. VAN VECHTEN, J. D. ZOOK, R. D. HORNING and B. GOLDENBERG, Jpn. J. Appl. Phys. 31 (1992) 3662.

    Google Scholar 

  128. M. B. PANISH and S. SUMSKI, J. Appl. Phys. 55(1984) 3571.

    Google Scholar 

  129. M. B. PANISH, H. TEMKIN, and S. SUMSKI, J. Vac. Sci. Technol. B 3 (1985) 657.

    Google Scholar 

  130. A. R. CALAWA, Appl. Phys. Lett. 38 (1981) 701.

    Google Scholar 

  131. D. HUET, M. LAMBERT, D. BONNEVIE and D. DEFRESNE, J. Vac. Sci. Technol. B 3(1985) 823.

    Google Scholar 

  132. A. SCHUTZE, J. ZACHEJA, M. WEYERS and D. KOHL, J. Cryst. Growth 107 (1991) 1036.

    Google Scholar 

  133. C. R. ABERNATHYY, F. REN, S. J. PEARTON, P. W. WISK, D. A. BOHLING, G. T. MUHR, A. C. JONES, M. STAVOLA and D. M. KOZUCH, presented at ICCBE-4, Nara, Japan, July, 1993, to be published in J. Cryst. Growth.

  134. C. R. ABERNATHY, S. J. PEARTON, R. CARUSO, F. REN and J. KOVALCHICK, Appl. Phys. Lett. 55(1989) 1750.

    Google Scholar 

  135. C. DUBON-CHEVALLIER, J. L. BENCHIMOL, V. AMARGER, F. ALEXANDRE, R. BOURGUIGA, J. DANGLA and F. HELIOT, Institute of Physics Conference Series Number 129, Ch. 8, 705 (1993).

  136. F. REN, C. R. ABERNATHY and S. J. PEARTON, J. Appl. Phys. 70 (1991) 2885.

    Google Scholar 

  137. F. REN, C. R. ABERNATHY, S. J. PEARTON, P. W. WISK and R. ESAGUI, Electron. Lett. 28 (1992) 1150.

    Google Scholar 

  138. N. KOBAYASHI, T. MAKIMOTO and Y. HORIKOSHI, Appl. Phys. Lett. 50 (1987) 1435.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Materials Science, University of Florida, 32611, Gainesville, FL, USA

    C. R. Abernathy

  2. AT & T Bell Laboratories, 07974, Murray Hill, NJ, USA

    W. S. Hobson

Authors
  1. C. R. Abernathy
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. W. S. Hobson
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Abernathy, C.R., Hobson, W.S. Carbon-impurity incorporation during the growth of epitaxial group III–V materials. J Mater Sci: Mater Electron 7, 1–21 (1996). https://doi.org/10.1007/BF00194087

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00194087

Keywords

Search

Navigation