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Growth and fatigue properties of pulsed laser deposited Pb1 − x La x (Zr y Ti z )O3 thin films with [0 0 /] preferred orientation

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Abstract

Growth of [0 0 /] preferentially oriented Pb1 - x La x (Zr y Ti z ) O3 (PLZT) thin films was carried out by using targets of either tetragonal or rhombohedral structure. The tetragonal films grew in a similar manner to the rhombohedral films. Both the substrate temperature (500 or 550 ‡C) and oxygen pressure (0.1 mbar, 10 Pa) required stringent control in order to deposit [0 0 /]-textured PLZT thin films. The ferroelectric and fatigue properties were examined.

The films deposited on YBa2Cu3O7 - x and CeO2 coated silicon (YBCO/CeO2/Si) substrates possessed substantially lower remanent polarization than those grown on YBCO coated SrTiO3 (YBCO/STO) substrates; this is ascribed to inferior crystallinity of the PLZT/YBCO/CeO2/Si films. The remanent polarization of tetragonal PLZT films was degraded insignificantly up to 108 polarization switching cycles, whereas that of rhombohedral PLZT films was already reduced to 80% of the initial value after 108 cycles. Low endurance of rhombohedral films was ascribed to the periodic stress induced when the inclined spontaneous polarization vector (P = [111]) switched. On the other hand, high endurance of tetragonal films was explained by the fact that the spontaneous polarization vector (P = [001]) lies along the film's normal such that switch cycles cause no lateral stress.

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Authors and Affiliations

  1. Department of Electronic Engineering and Institute of Electronics, National Chiao-Tung University, Hsin-Chu, Taiwan

    W. J. Lin & T. Y. Tseng

  2. Chung Shan Institute of Science and Technology, Materials R&D Center, Lung-Tan, Taiwan

    Y. Z. Wu, S. P. Lin, S. L. Tu, H. Chang & S. J. Yang

  3. Materials Science Center, National Tsing-Hua University, Hsin-Chu, Taiwan

    I. N. Lin

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  1. W. J. Lin
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Lin, W.J., Tseng, T.Y., Wu, Y.Z. et al. Growth and fatigue properties of pulsed laser deposited Pb1 − x La x (Zr y Ti z )O3 thin films with [0 0 /] preferred orientation. J Mater Sci: Mater Electron 7, 409–417 (1996). https://doi.org/10.1007/BF00180778

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  • DOI: https://doi.org/10.1007/BF00180778

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