Abstract
Dielectric characteristics of Ba(Mg1/3Ta2/3)O3 ceramics (BMT ceramics) sintered at low temperatures with 2–3 wt% NaF additives were determined. A dielectric constant of 25 and extremely low dielectric loss (< 0.0001) were measured at 100 kHz and 1 MHz in BMT ceramics sintered under these conditions, and no frequency dependence of the dielectric constant was observed. This suggested that NaF as sintering additive had no harmful influence on the dielectric properties of the ceramics.
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Chen, X.M., Wu, Y.J. Dielectric characteristics of Ba(Mg1/3Ta2/3)O3 ceramics sintered at low temperatures. J Mater Sci: Mater Electron 7, 369–371 (1996). https://doi.org/10.1007/BF00180771
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DOI: https://doi.org/10.1007/BF00180771