Abstract
Silicon nitride films were deposited by a plasma-enhanced chemical vapour deposition technique using silane-ammonia as the reactant gas mixture. The influence of the process parameters such as flow ratio of the reactant gases, pressure, substrate temperature, r.f. power, time of deposition and electrode spacing, on the deposition and etch rates were investigated and experimental results are presented.
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Lee, K.R., Sundaram, K.B. & Malocha, D.C. Deposition parameters studies of silicon nitride films prepared by plasma-enhanced CVD process using silane-ammonia. J Mater Sci: Mater Electron 4, 283–287 (1993). https://doi.org/10.1007/BF00179225
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DOI: https://doi.org/10.1007/BF00179225