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Barrier height enhancement in WSi x /GaAs Schottky diodes by rapid thermal annealing

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Abstract

The influence of rapid thermal annealing on WSi2/GaAs and WSi0.6/GaAs Schottky diodes was studied by means of Rutherford backscattering spectroscopy (RBS), particle induced X-ray emission spectroscopy (PIXE), X-ray diffraction (XRD) analysis and current-voltage electrical measurement. Despite the amorphicity of the layers remaining after annealing and only relatively minor changes in RBS and PIXE spectra, large barrier enhancements were registered, especially for WSi2/GaAs diodes. For an explanation of this effect, the barrier height inhomogeneity concept is used.

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Authors and Affiliations

  1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39, Bratislava, Czecho-Slovakia

    J. Osvald & T. Lalinský

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  1. J. Osvald
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  2. T. Lalinský
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Osvald, J., Lalinský, T. Barrier height enhancement in WSi x /GaAs Schottky diodes by rapid thermal annealing. J Mater Sci: Mater Electron 4, 267–270 (1993). https://doi.org/10.1007/BF00179222

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  • DOI: https://doi.org/10.1007/BF00179222

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