Abstract
Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CuInSe2 diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CuInSe2 diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CuInSe2 diodes. Thus, the importance of using Schottky diodes lies in the elimination of the window n-type layer diffusion into CuInSe2 material to reveal the intrinsic properties of the semiconductor. A comparison between previously reported defect states in Cd(Zn)S-CuInSe2 and those found in Schottky/CuInSe2 is made.
The defect concentration is calculated as well as the capture cross-section. Some of the defect levels agree with previously published data. A common feature exhibited in all the measured samples is that the capacitance transient is non-exponential, and the DLTS spectrum is relatively broad, due to the contribution of two or more closely spaced levels.
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Bakry, A.M., Elnaggar, A.M. Study of deep levels in Schottky/CuInSe2 single-crystal devices by deep-level transient spectroscopy measurements. J Mater Sci: Mater Electron 7, 191–192 (1996). https://doi.org/10.1007/BF00133114
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DOI: https://doi.org/10.1007/BF00133114