The influence of the interaction of electrons on the spectrum of a gapless semiconductor with m h ≫ m e is considered. For k ≫ k0 = mee2/% MathType!MTEF!2!1!+-% feaafiart1ev1aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaGaeq4Xdmgaaa!37A4!\[\chi\]we obtain % MathType!MTEF!2!1!+-% feaafiart1ev1aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGceaqabeaacqaH1o% qzdaWgaaWcbaGaaeyzaaqabaGccqGH9aqpcaqGGaWaaSaaaeaacaqG% RbWaaWbaaSqabeaacaqGYaaaaaGcbaGaaGOmaiaab2gadaWgaaWcba% GaaeyzaaqabaaaaOGaey4kaSYaaSaaaeaacaaIZaGaeqiWdaNaaeyz% amaaCaaaleqabaGaaeyzaaaaaOqaaiaaiodacaaIYaGaeq4Xdmgaai% aabUgacqGHsisldaWcaaqaaiaaikdaaeaacqaHapaCaaGaeqyYdC3a% aSbaaSqaaiaaicdaaeqaaOGaaeiiaiaabYgacaqGUbWaaSaaaeaaca% qGRbaabaGaae4AamaaBaaaleaacaqGWaaabeaaaaaakeaacqaH1oqz% daWgaaWcbaGaaeiAaaqabaGccqGH9aqpcaqGGaWaaSaaaeaacaqGRb% WaaWbaaSqabeaacaqGYaaaaaGcbaGaaGOmaiaab2gadaWgaaWcbaGa% aeiAaaqabaaaaOGaey4kaSYaaSaaaeaacaaIZaGaeqiWdaNaaeyzam% aaCaaaleqabaGaaeOmaaaaaOqaaiaaiodacaaIYaGaeq4Xdmgaaiaa% bUgacqGHsisldaWcaaqaaiaaikdaaeaacqaHapaCaaGaeqyYdC3aaS% baaSqaaiaaicdaaeqaaOGaaeiiaiaabYgacaqGUbWaaSaaaeaacaqG% RbaabaGaae4AamaaBaaaleaacaqGWaaabeaaaaaaaaa!7239!\[\begin{gathered}\varepsilon _{\text{e}} = {\text{ }}\frac{{{\text{k}}^{\text{2}} }}{{2{\text{m}}_{\text{e}} }} + \frac{{3\pi {\text{e}}^{\text{e}} }}{{32\chi }}{\text{k}} - \frac{2}{\pi }\omega _0 {\text{ ln}}\frac{{\text{k}}}{{{\text{k}}_{\text{0}} }} \hfill \\\varepsilon _{\text{h}} = {\text{ }}\frac{{{\text{k}}^{\text{2}} }}{{2{\text{m}}_{\text{h}} }} + \frac{{3\pi {\text{e}}^{\text{2}} }}{{32\chi }}{\text{k}} - \frac{2}{\pi }\omega _0 {\text{ ln}}\frac{{\text{k}}}{{{\text{k}}_{\text{0}} }} \hfill \\\end{gathered}\](% MathType!MTEF!2!1!+-% feaafiart1ev1aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn% hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr% 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9% vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x% fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaGaeqyYdC3aaS% baaSqaaiaaicdaaeqaaOGaeyypa0JaaeyBamaaBaaaleaacaqGLbaa% beaakiaabwgadaahaaWcbeqaaiaabsdaaaGccaGGVaGaaGOmaiabeE% 8aJnaaCaaaleqabaGaaGOmaaaaaaa!41A3!\[\omega _0 = {\text{m}}_{\text{e}} {\text{e}}^{\text{4}} /2\chi ^2\]). In the region k ≪ k0 the assumption ɛ e ≫ ɛ h leads to a contradiction which probably means the failure of the random phase approximation. It is demonstrated that at finite temperatures T ≫ Ω0 the energy spectra of electrons and holes in the most essential momentum regions remain the same as for T = 0.
Similar content being viewed by others
References
A. A. Abrikosov and S. D. Beneslavski, Zh. Eksp. Tear. Fiz. 59, 1280 (1970).
A. A. Abrikosov and S. D. Beneslavski, J. Low Temp. Phys. 5, 141 (1971).
A. A. Abrikosov, Zh. Eksp. Teor. Fiz. 66, 1443 (1974).
K. G. Wilson and M. E. Fisher, Phys. Rev. Lett. 28, 240 (1972); K. G. Wilson, Phys. Rev. Lett. 28, 548 (1972).
R. A. Ferrel and D. J. Scalapino, Phys. Rev. Lett. 29, 413 (1972).
J. C. Broerman, in Proc. Int. Conf. Phys. Semiconductors (PWN, Warsaw, 1972), Vol. II, p. 917.
E. O. Kane, J. Phys. Chem. Solids 1, 249 (1957).
B. I. Halperin and T. M. Rice, Rev. Mod. Phys. 40, 755 (1968).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Abrikosov, A.A. On the energy spectrum of gapless semiconductors with considerably differing masses of electrons and holes. J Low Temp Phys 18, 185–199 (1975). https://doi.org/10.1007/BF00118152
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00118152