Bound states and scattering resonances for a 3He-vacancy system in crystalline 4He are shown to exist. For realistic physical parameters the theory yields binding energies of ∼ 0.1 K. It is found that the bound states and scattering resonances tend to enhance the diffusion coefficient of 3He. The experimental consequences of this enhanced diffusion are discussed.
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Locke, D.P., Young, R.A. Existence of3He-vacancy bound states in4He crystals. J Low Temp Phys 23, 177–189 (1976). https://doi.org/10.1007/BF00117250
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DOI: https://doi.org/10.1007/BF00117250