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A tunneling investigation of energy-gap anisotropy in superconducting bulk aluminum crystals

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Tunnel junctions have been fabricated on vacuum-grown Al single crystals. An investigation of energy gap anisotropy in Al has been carried out and data from 25 tunnel junctions are presented. The reduced gap parameter 2δ/k B T c was found to vary from 2.8 to 3.9. A value for the energy gap of thin Al films deposited on a single-crystal Al substrate has also been obtained and compared to the gap found for similar films on glass slide substrates.

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  1. Physics Department, Dalhousie University, Halifax, Nova Scotia, Canada

    B. L. Blackford

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Blackford, B.L. A tunneling investigation of energy-gap anisotropy in superconducting bulk aluminum crystals. J Low Temp Phys 23, 43–52 (1976). https://doi.org/10.1007/BF00117243

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