The effects of junction resistance and Counterelectrode material on the results of point-contact tunneling studies into single- and polycrystalline YBa2Cu3O7−y are illustrated. Although reasonably symmetric I(V) curves predominantly indicate energy gap values δ ~ 20 meV, large asymmetries are often found for high-resistance junctions. Very low-resistance junctions show the expected behavior of a pure metallic bridge and indicate Δ ~ 25Δ30 meV.
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Moog, E.R., Hawley, M.E., Gray, K.E. et al. Effects of junction resistance and counterelectrode material on point-contact tunneling into single- and polycrystalline YBa2Cu3O7−y . J Low Temp Phys 71, 393–402 (1988). https://doi.org/10.1007/BF00116870
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DOI: https://doi.org/10.1007/BF00116870