Abstract
The temperature dependence of the resistivity over the range 1.8–20 K has been measured on the narrow-gap semiconductor SnTe with various Mn contents (<2.2at.%) and carrier concentrations [p = (1.2–8) × 1020 cm−3]. The resistivity shows an anomaly at some magnetic ordering temperature T m, which depends sublinearly on the Mn content c, but not linearly. However, together with a negative magnetoresistance, we have confirmed that the carrier scattering in this crystal is due to the s-d interaction as in dilute magnetic alloys.
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Inoue, M., Yagi, H., Ishii, K. et al. Electrical resistivity of Mn-doped SnTe crystals at low temperature. J Low Temp Phys 23, 785–790 (1976). https://doi.org/10.1007/BF00116311
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DOI: https://doi.org/10.1007/BF00116311