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Critical currents of sputtered MxPb1 ± xMo6 + y S8-type thin films

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The M x Pb1 ± x Mo6 + y S8 thin films (where x = 0.1 and 0.2; y = 0 and 0.35; M = La, Nd, Pr, Gd, Y, or U) were prepared by a dc getter sputtering method. The influence of doping elements on critical transition temperature T c, initial slope [dH c2/dT]Tc, and critical current density J cwas studied. The critical current was determined as a function of external magnetic field and heat treatment. It was found that in some cases the doping elements increase the critical transition temperatures and initial slopes. Between 4 and 14T they also make the critical current of the PbMo6S8 phase less dependent on external field.

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Authors and Affiliations

  1. Institute for Low Temperature and Structure Research, Polish Academy of Sciences, Wrocŀaw, Poland

    Piotr Przysŀupski & Roman Horyń

  2. International Laboratory of High Magnetic Fields and Low Temperatures, Wrocŀaw, Poland

    Beata Greń

Authors
  1. Piotr Przysŀupski
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  2. Roman Horyń
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  3. Beata Greń
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Przysŀupski, P., Horyń, R. & Greń, B. Critical currents of sputtered MxPb1 ± xMo6 + y S8-type thin films. J Low Temp Phys 38, 93–103 (1980). https://doi.org/10.1007/BF00115270

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  • DOI: https://doi.org/10.1007/BF00115270

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