Skip to main content
SpringerLink
Log in

Recent advances of phase engineering in group VI transition metal dichalcogenides

  • Review Paper
  • Published:
Tungsten Aims and scope Submit manuscript

A Correction to this article was published on 21 August 2021

This article has been updated

Abstract

As the crystal quality and phase structure of two-dimensional (2D) transition metal dichalcogenides (TMDs) have significant impacts on their properties such as electroconductivity, superconductivity and chemical stability, the precise synthesis, which plays an important role in fundamental researches and industrial applications, is highly required. Group VI TMDs, such as MoS2, usually exhibit diverse polymorphs including semiconducting 1H and metallic 1T phases. Even great efforts are devoted to revealing the structure-dependent physicochemical nature of TMDs by modulating their phases from the stable to the metastable at the atomic scale, there are still challenges on the phase-controlled synthesis of Group VI TMDs with metallic or semimetal properties. In this review, methods such as ion intercalation, chemical doping, strain engineering, defect triggering, and electric-field treatment are examined in detail. Finally, challenges and opportunities in this research field are proposed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7

Similar content being viewed by others

Change history

References

  1. Voiry D, Mohite AD, Chhowalla M. Phase engineering of transition metal dichalcogenides. Chem Soc Rev. 2015;44(9):2702.

    Article  CAS  Google Scholar 

  2. Manzeli S, Ovchinnikov D, Pasquier D, Yazyev OV, Kis A. 2D transition metal dichalcogenides. Nat Rev Mater. 2017;2(8):17033.

    Article  CAS  Google Scholar 

  3. Wang JL, Wei Y, Li H, Huang X, Zhang H. Crystal phase control in two-dimensional materials. Sci China Chem. 2018;61(10):1227.

    Article  CAS  Google Scholar 

  4. Ma Y, Ajayan PM, Yang SB, Gong YJ. Recent advances in synthesis and applications of 2D junctions. Small. 2018;14(38):1801606

    Article  CAS  Google Scholar 

  5. Fiori G, Bonaccorso F, Iannaccone G, Palacios T, Neumaier D, Seabaugh A, Banerjee SK, Colombo L. Electronics based on two-dimensional materials. Nat Nanotech. 2014;9(10):768.

    Article  CAS  Google Scholar 

  6. Huang LN, McCormick TM, Ochi M, Zhao ZY, Suzuki MT, Arita R, Wu Y, Mou DX, Cao HB, Yan JQ, Trivedi N, Kaminski A. Spectroscopic evidence for a type II Weyl semimetallic state in MoTe2. Nat Mater. 2016;15(11):1155.

    Article  CAS  Google Scholar 

  7. Tang SJ, Zhang CF, Wong D, Pedramrazi Z, Tsai HZ, Jia CJ, Moritz B, Claassen M, Ryu H, Kahn S, Jiang J, Yan H, Hashimoto M, Lu DH, Moore RG, Hwang CC, Hwang CY, Hussain Z, Chen YL, Ugeda MM, Liu Z, Xie XM, Devereaux TP, Crommie MF, Mo SK, Shen ZX. Quantum spin Hall state in monolayer 1T’-WTe2. Nat Phys. 2017;13(7):683.

    Article  CAS  Google Scholar 

  8. Wu Y, Mou DX, Jo NH, Sun KW, Huang LN, Bud’ko SL, Canfield PC, Kaminski A. Observation of Fermi arcs in the type-II Weyl semimetal candidate WTe2. Phys Rev B. 2016;94(12):121113.

    Article  Google Scholar 

  9. Yu YF, Nam GH, He QY, Wu XJ, Zhang K, Yang ZZ, Chen JZ, Ma QL, Zhao MT, Liu ZQ, Ran FR, WangXZ Li H, Huang X, Li B, Xiong QH, Zhang Q, Liu Z, Gu L, Du YH, Huang W, Zhang H. High phase-purity 1T′-MoS2- and 1T′-MoSe2-layered crystals. Nat Chem. 2018;10(6):638.

    Article  CAS  Google Scholar 

  10. Wilson JA, Yoffe AD. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties. Adv Phys. 1969;18(73):193

    Article  CAS  Google Scholar 

  11. Jiménez Sandoval S, Yang D, Frindt RF, Irwin JC. Raman study and lattice dynamics of single molecular layers of MoS2. Phys Rev B. 1991;44(8):3955.

    Article  Google Scholar 

  12. Yang D, Sandoval SJ, Divigalpitiya WMR, Irwin JC, Frindt RF. Structure of single-molecular-layer MoS2. Phys Rev B. 1991;43(14):12053.

    Article  CAS  Google Scholar 

  13. Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A. Single-layer MoS2 transistors. Nat Nanotech. 2011;6(3):147.

    Article  CAS  Google Scholar 

  14. Mak KF, Lee C, Hone J, Shan J, Heinz TF. Atomically thin MoS2: a new direct-gap semiconductor. Phys Rev Lett. 2010;105(13):136805

    Article  CAS  Google Scholar 

  15. Martin BD. Lithium intercalation via n-Butyllithium of the layered transition metal dichalcogenides. Mat Res Bull. 1975;10(4):287.

    Article  Google Scholar 

  16. Chrissafis K, Stoemenos J, Economou NA. Structural studies of MoS2 intercalated by lithium. Mat Sci Eng B. 1989;3(1):145.

    Article  Google Scholar 

  17. Rocquefelte X, Boucher F, Gressier P. Mo cluster formation in the intercalation compound LiMoS2. Phys Rev B. 2000;62(4):2397.

    Article  CAS  Google Scholar 

  18. Naylor CH, Parkin WM, Ping JL, Gao ZL, Zhou YR, Kim YK, Streller F, Carpick RW, Rappe AM, Drndic M, Kikkawa JM, Johnson AT. Monolayer single-crystal 1T’-MoTe2 grown by chemical vapor deposition exhibits weak antilocalization effect. Nano Lett. 2016;16(7):4297.

    Article  CAS  Google Scholar 

  19. Calandra M. Chemically exfoliated single-layer MoS2: stability, lattice dynamics, and catalytic adsorption from first principles. Phys Rev B. 2013;88(24):4269

    Article  CAS  Google Scholar 

  20. Kan M, Wang JY, Li XW, Zhang SH, Li YW, Kawazoe Y, Sun Q, Jena P. Structures and phase transition of a MoS2 monolayer. J Phys Chem C. 2014;118(3):1515.

    Article  CAS  Google Scholar 

  21. Gao GP, Jiao Y, Ma FX, Jiao YL, Waclawik E, Du AJ. Charge mediated semiconducting-to-metallic phase transition in molybdenum disulfide monolayer and hydrogen evolution reaction in new 1T′ phase. J Phys Chem C. 2015;119(23):13124.

    Article  CAS  Google Scholar 

  22. Sun Y, Wu SC, Ali MN, Felser C, Yan BH. Prediction of Weyl semimetal in orthorhombic MoTe2. Phys Rev B. 2015;92(16):161107.

    Article  CAS  Google Scholar 

  23. Ma XL, Guo PJ, Yi CJ, Yu QH, Zhang AM, Ji JT, Tian Y, Jin F, Wang YY, Liu K, Xia TL, Shi YG, Zhang QM. Raman scattering in the transition-metal dichalcogenides of 1T’-MoTe2, Td-MoTe2, and Td-WTe2. Phys Rev B. 2016;94(21):214105.

    Article  Google Scholar 

  24. Chen ZH, Wang LW. Material genome explorations and new phases of two-dimensional MoS2, WS2, and ReS2 monolayers. Chem Mater. 2018;30(18):6242.

    Article  CAS  Google Scholar 

  25. Jin Q, Liu N, Chen BH, Mei D. Mechanisms of semiconducting 2H to metallic 1T phase transition in two-dimensional MoS2 nanosheets. J Phys Chem C. 2018;122(49):28215.

    Article  CAS  Google Scholar 

  26. Qian XF, Liu JW, Fu L, Li J. Quantum spin hall effect in two-dimensional transition metal dichalcogenides. Science. 2014;346:1344.

    Article  CAS  Google Scholar 

  27. Splendiani A, Sun L, Zhang YB, Li TS, Kim JW, Chim CY, Galli G, Wang F. Emerging photoluminescence in monolayer MoS2. Nano Lett. 2010;10(4):1271.

    Article  CAS  Google Scholar 

  28. Eda G, Yamaguchi H, Voiry D, Fujita T, Chen M, Chhowalla M. Photoluminescence from chemically exfoliated MoS2. Nano Lett. 2011;11(12):5111.

    Article  CAS  Google Scholar 

  29. Castellanos-Gomez A, Poot M, Steele GA, van der Zant HS, Agrait N, Rubio-Bollinger G. Elastic properties of freely suspended MoS2 nanosheets. Adv Mater. 2012;24(6):772.

    Article  CAS  Google Scholar 

  30. Zeng HL, Dai JF, Yao W, Xiao D, Cui XD. Valley polarization in MoS2 monolayers by optical pumping. Nat Nanotech. 2012;7(8):490.

    Article  CAS  Google Scholar 

  31. Lin YC, Yeh CH, Lin HC, Siao MD, Liu Z, Nakajima H, Okazaki T, Chou MY, Suenaga K, Chiu PW. Stable 1T tungsten disulfide monolayer and its junctions: growth and atomic structures. ACS Nano. 2018;12(12):12080.

    Article  CAS  Google Scholar 

  32. Bertolazzi S, Brivio J, Kis A. Stretching and breaking of ultrathin MoS2. ACS Nano. 2011;5(12):9709.

    Article  CAS  Google Scholar 

  33. Zhou W, Chen JZ, Gao H, Hu T, Ruan SC, Stroppa A, Ren W. Anomalous and polarization-sensitive photoresponse of Td-WTe2 from visible to infrared light. Adv Mater. 2018:1804629.

  34. Liu Q, Fang Q, Chu WS, Wan YY, Li XL, Xu WY, Habib M, Tao S, Zhou Y, Liu DB, Xiang T, Khalil A, Wu XJ, Chhowalla M, Ajayan PM, Song L. Electron-doped 1T-MoS2 via interface engineering for enhanced electrocatalytic hydrogen evolution. Chem Mater. 2017;29(11):4738.

    Article  CAS  Google Scholar 

  35. Voiry D, Salehi M, Silva R, Fujita T, Chen MW, Asefa T, Shenoy VB, Eda G, Chhowalla M. Conducting MoS2 nanosheets as catalysts for hydrogen evolution reaction. Nano Lett. 2013;13(12):6222.

    Article  CAS  Google Scholar 

  36. Yin Y, Han JC, Zhang YM, Zhang XH, Xu P, Yuan Q, Samad L, Wang XJ, Wang Y, Zhang ZH, Zhang P, Cao XZ, Song B, Jin S. Contributions of phase, sulfur vacancies, and edges to the hydrogen evolution reaction catalytic activity of porous molybdenum disulfide nanosheets. J Am Chem Soc. 2016;138(25):7965.

    Article  CAS  Google Scholar 

  37. Lukowski MA, Daniel AS, Meng F, Forticaux A, Li LS, Jin S. Enhanced hydrogen evolution catalysis from chemically exfoliated metallic MoS2 nanosheets. J Am Chem Soc. 2013;135(28):10274.

    Article  CAS  Google Scholar 

  38. Voiry D, Yamaguchi H, Li JW, Silva R, Alves DCB, Fujita T, Chen MW, Asefa T, Shenoy V, Eda G, Chhowalla M. Enhanced catalytic activity in strained chemically exfoliated WS2 nanosheets for hydrogen evolution. Nat Mater. 2013;12(9):850.

    Article  CAS  Google Scholar 

  39. Wang HT, Lu ZY, Xu SC, Kong DS, Cha JJ, Zheng GY, Hsu PC, Yan K, Bradshaw D, Prinz FB, Cui Y. Electrochemical tuning of vertically aligned MoS2 nanofilms and its application in improving hydrogen evolution reaction. Proc Natl Acad Sci USA. 2013;110(49):19701.

    Article  CAS  Google Scholar 

  40. Wang HT, Lu ZY, Kong DH, Sun J, Hymel TM, Cui Y. Electrochemical tuning of MoS2 nanoparticles on three-dimensional substrate for efficient hydrogen evolution. ACS Nano. 2014;8(5):4940.

    Article  CAS  Google Scholar 

  41. Chang K, Hai X, Pang H, Zhang HB, Shi L, Liu GG, Liu HM, Zhao GX, Li M, Ye J. Targeted synthesis of 2H- and 1T-phase MoS2 monolayers for catalytic hydrogen evolution. Adv Mater. 2016;28(45):10033.

    Article  CAS  Google Scholar 

  42. Wang S, Zhang D, Li B, Zhang C, Du ZG, Yin HM, Bi XF, Yang SB. Ultrastable in-plane 1T-2H MoS2 heterostructures for enhanced hydrogen evolution reaction. Adv Energy Mater. 2018;8(25):1801345.

    Article  CAS  Google Scholar 

  43. Duerloo KA, Li Y, Reed EJ. Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers. Nat Commun. 2014;5:4214.

    Article  CAS  Google Scholar 

  44. Somoano RB, Hadek V, Rembaum A. Alkali metal intercalates of molybdenum disulfide. J Chem Phys. 1973;58(2):697.

    Article  CAS  Google Scholar 

  45. Cheng YC, Nie AM, Zhang QY, Gan LY, Reza SY, Udo S. Origin of the phase transition in lithiated molybdenum disulfide. ACS Nano. 2014;8(11):11447.

    Article  CAS  Google Scholar 

  46. Heising J, Kanatzidis MG. Structure of restacked MoS2 and WS2 elucidated by electron crystallography. J Am Chem Soc. 1999;121(4):638.

    Article  CAS  Google Scholar 

  47. Wang LF, Xu Z, Wang WL, Bai XD. Atomic mechanism of dynamic electrochemical lithiation processes of MoS2 nanosheets. J Am Chem Soc. 2014;136(18):6693.

    Article  CAS  Google Scholar 

  48. Kappera R, Voiry D, Yalcin SE, Branch B, Gupta G, Mohite AD, Chhowalla M. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat Mater. 2014;13(12):1128.

    Article  CAS  Google Scholar 

  49. Guo YS, Sun DZ, Ouyang B, Raja A, Song J, Heinz TF, Brus LE. Probing the dynamics of the metallic-to-semiconducting structural phase transformation in MoS2 crystals. Nano Lett. 2015;15(8):5081.

    Article  CAS  Google Scholar 

  50. Chen ZX, Leng K, Zhao XX, Malkhandi S, Tang W, Tian BB, Dong L, Zheng LR, Lin M, Yeo BS, Loh KP. Interface confined hydrogen evolution reaction in zero valent metal nanoparticles-intercalated molybdenum disulfide. Nat Commun. 2017;8:14548.

    Article  CAS  Google Scholar 

  51. Liu LN, Wu JX, Wu LY, Ye M, Liu XZ, Wang Q, Hou SY, Lu PF, Sun LF, Zheng JY, Xing L, Gu L, Jiang XW, Xie LM, Jiao LY. Phase-selective synthesis of 1T’ MoS2 monolayers and heterophase bilayers. Nat Mater. 2018;17(12):1108.

    Article  CAS  Google Scholar 

  52. Wypych F, Schöllhorn R. 1T-MoS2, a new metallic modification of molybdenum disulfide. J Chem Soc, Chem Commun. 1992;19:1386.

    Article  Google Scholar 

  53. Liu Q, Li XL, Xiao ZR, Zhou Y, Chen HP, Khalil A, Xiang T, Xu JQ, Chu WS, Wu XJ, Yang JL, Wang CM, Xiong YJ, Jin CH, Ajayan PM, Song L. Stable metallic 1T-WS2 nanoribbons intercalated with ammonia ions: the correlation between structure and electrical/optical properties. Adv Mater. 2015;27(33):4837.

    Article  CAS  Google Scholar 

  54. Ye LJ, Chen SJ, Li WJ, Pi MY, Wu TL, Zhang DK. Tuning the electrical transport properties of multilayered molybdenum disulfide nanosheets by intercalating phosphorus. J Phys Chem C. 2015;119(17):9560.

    Article  CAS  Google Scholar 

  55. Eda G, Fujita T, Yamaguchi H, Voiry D, Chen MW, Chhowalla M. Coherent atomic and electronic heterostructures of single-layer MoS2. ACS Nano. 2012;6(8):7311.

    Article  CAS  Google Scholar 

  56. Zheng J, Zhang H, Dong SH, Liu YP, Tai Nai C, Suk Shin H, Young Jeong H, Liu B, Ping Loh K. High yield exfoliation of two-dimensional chalcogenides using sodium naphthalenide. Nature Commun. 2014;5:2995.

    Article  CAS  Google Scholar 

  57. Sun LF, Yan XX, Zheng JY, Yu HD, Lu ZX, Gao SP, Liu LN, Pan XQ, Wang D, Wang ZG, Wang P, Jiao LY. Layer-dependent chemically induced phase transition of two-dimensional MoS2. Nano Lett. 2018;18(6):3435.

    Article  CAS  Google Scholar 

  58. Tan SJ, Abdelwahab I, Ding ZJ, Zhao XX, Yang TS, Loke GZ, Lin H, Verzhbitskiy I, Poh SM, Xu H, Nai CT, Zhou W, Eda G, Jia B, Loh KP. Chemical stabilization of 1T’ phase transition metal dichalcogenides with giant optical kerr nonlinearity. J Am Chem Soc. 2017;139(6):2504.

    Article  CAS  Google Scholar 

  59. Tan SJR, Sarkar S, Zhao XX, Luo X, Luo YZ, Poh SM, Abdelwahab I, Zhou W, Venkatesan T, Chen W, Quek SY, Loh KP. Temperature- and phase-dependent phonon renormalization in 1T’-MoS2. ACS Nano. 2018;12(5):5051.

    Article  CAS  Google Scholar 

  60. Zeng ZY, Yin ZY, Huang X, Li H, He QY, Lu G, Boey F, Zhang H. Single-layer semiconducting nanosheets: high-yield preparation and device fabrication. Angew Chem Int Ed Engl. 2011;50(47):11289.

    Article  Google Scholar 

  61. Zeng ZY, Sun T, Zhu JX, Huang X, Yin ZY, Lu G, Fan ZX, Yan QY, Hng HH, Zhang H. An effective method for the fabrication of few-layer-thick inorganic nanosheets. Angew Chem Int Edit. 2012;51(36):9052.

    Article  CAS  Google Scholar 

  62. Kutana A, Penev ES, Yakobson BI. Engineering electronic properties of layered transition-metal dichalcogenide compounds through alloying. Nanoscale. 2014;6(11):5820.

    Article  CAS  Google Scholar 

  63. Kochat V, Apte A, Hachtel JA, Kumazoe H, Krishnamoorthy A, Susarla S, Idrobo JC, Shimojo F, Vashishta P, Kalia R, Nakano A, Tiwary CS, Ajayan PM. Re doping in 2D transition metal dichalcogenides as a new route to tailor structural phases and induced magnetism. Adv Mater. 2017;29(43):1703754.

    Article  CAS  Google Scholar 

  64. Yu P, Lin JH, Sun LF, Le QL, Yu XC, Gao GH, Hsu CH, Wu D, Chang TR, Zeng QS, Liu FC, Wang QJ, Jeng HT, Lin H, Trampert A, Shen ZX, Suenaga K, Liu Z. Metal-semiconductor phase-transition in WSe2(1−x) Te2x monolayer. Adv Mater. 2017;29(4):1603991.

    Article  CAS  Google Scholar 

  65. Rhodes D, Chenet DA, Janicek BE, Nyby C, Lin Y, Jin W, Edelberg D, Mannebach E, Finney N, Antony A, Schiros T, Klarr T, Mazzoni A, Chin M, Chiu YC, Zheng W, Zhang QR, Ernst F, Dadap JI, Tong X, Ma J, Lou R, Wang S, Qian T, Ding H, Osgood RM Jr, Paley DW, Lindenberg AM, Huang PY, Pasupathy AN, Dubey M, Hone J, Balicas L. Engineering the structural and electronic phases of MoTe2 through W substitution. Nano Lett. 2017;17(3):1616.

    Article  CAS  Google Scholar 

  66. Yang K, Wang XS, Li H, Chen B, Zhang X, Li SZ, Wang N, Zhang H, Huang X, Huang W. Composition- and phase-controlled synthesis and applications of alloyed phase heterostructures of transition metal disulphides. Nanoscale. 2017;9(16):5102.

    Article  CAS  Google Scholar 

  67. Yang SZ, Gong YJ, Manchanda P, Zhang YY, Ye GL, Chen SM, Song L, Pantelides ST, Ajayan PM, Chisholm MF, Zhou W. Rhenium-doped and stabilized MoS2 atomic layers with basal-plane catalytic activity. Adv Mater. 2018;30(51):1803477.

    Article  CAS  Google Scholar 

  68. Johari P, Shenoy VB. Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains. ACS Nano. 2012;6(6):5449.

    Article  CAS  Google Scholar 

  69. He KL, Poole C, Mak KF, Shan J. Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2. Nano Lett. 2013;13(6):2931.

    Article  CAS  Google Scholar 

  70. Nayak AP, Bhattacharyya S, Zhu J, Liu J, Wu X, Pandey T, Jin C, Singh AK, Akinwande D, Lin JF. Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide. Nat Commun. 2014;5:4731.

    Article  CAS  Google Scholar 

  71. Zhou L, Xu K, Zubair A, Liao AD, Fang WJ, Ouyang FP, Lee YH, Ueno K, Saito R, Palacios T, Kong J, Dresselhaus MS. Large-area synthesis of high-quality uniform few-layer MoTe2. J Am Chem Soc. 2015;137(37):11892.

    Article  CAS  Google Scholar 

  72. Manzeli S, Allain A, Ghadimi A, Kis A. Piezoresistivity and strain-induced band gap tuning in atomically thin MoS2. Nano Lett. 2015;15(8):5330.

    Article  CAS  Google Scholar 

  73. Song S, Keum DH, Cho S, Perello D, Kim Y, Lee YH. Room temperature semiconductor-metal transition of MoTe2 thin films engineered by strain. Nano Lett. 2016;16(1):188.

    Article  CAS  Google Scholar 

  74. Mcdonnell S, Addou R, Buie C, Wallace RM, Hinkle CL. Defect-dominated doping and contact resistance in MoS2. ACS Nano. 2014;8(3):2880.

    Article  CAS  Google Scholar 

  75. Keum DH, Cho S, Kim JH, Choe DH, Sung HJ, Kan M, Kang H, Hwang JY, Kim SW, Yang H, Chang KJ, Lee YH. Bandgap opening in few-layered monoclinic MoTe2. Nature Phys. 2015;11(6):482.

    Article  CAS  Google Scholar 

  76. Cho S, Kim S, Kim JH, Zhao J, Seok J, Keum DH, Baik J, Choe DH, Chang KJ, Suenaga K, Kim SM, Lee YH, Yang H. Phase patterning for ohmic homojunction contact in MoTe2. Science. 2015;349(6248):625.

    Article  CAS  Google Scholar 

  77. Zhou L, Zubair A, Wang ZQ, Zhang X, Ouyang FP, Xu K, Fang WJ, Ueno K, Li J, Palacios T, Kong J, Dresselhaus MS. Synthesis of high-quality large-area homogenous 1T′ MoTe2 from chemical vapor deposition. Adv Mater. 2016;28(43):9526.

    Article  CAS  Google Scholar 

  78. Zhu JQ, Wang ZC, Yu H, Li N, Zhang J, Meng JL, Liao MZ, Zhao J, Lu XB, Du LJ, Yang R, Shi DX, Jiang Y, Zhang GY. Argon plasma induced phase transition in monolayer MoS2. J Am Chem Soc. 2017;139(30):10216.

    Article  CAS  Google Scholar 

  79. Lin YC, Dumcenco DO, Huang YS, Suenaga K. Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2. Nat Nanotech. 2014;9(5):391.

    Article  CAS  Google Scholar 

  80. Li Y, Duerloo KA, Wauson K, Reed EJ. Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating. Nat Commun. 2016;7:10671.

    Article  CAS  Google Scholar 

  81. Zhang CX, Kc S, Nie YF, Liang CP, Vandenberghe WG, Longo RC, Zheng YP, Kong FT, Hong S, Wallace RM, Cho K. Charge mediated reversible metal-insulator transition in monolayer MoTe2 and WxMo1−xTe2 Alloy. ACS Nano. 2016;10(8):7370.

    Article  CAS  Google Scholar 

  82. Wang Y, Xiao J, Zhu HY, Li Y, Alsaid Y, Fong KY, Zhou Y, Wang SQ, Shi W, Wang Y, Zettl A, Reed EJ, Zhang X. Structural phase transition in monolayer MoTe2 driven by electrostatic doping. Nature. 2017;550(7677):487.

    Article  CAS  Google Scholar 

  83. Zhang F, Zhang HR, Krylyuk S, Milligan CA, Zhu YQ, Zemlyanov DY, Bendersky LA, Burton BP, Davydov AV, Appenzeller J. Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories. Nat Mater. 2019;18(1):55.

    Article  CAS  Google Scholar 

Download references

Acknowledgements

This work was financially supported by the National Key R&D Program of China (Grant 2018YFA0306900) and National Natural Science Foundation of China (Grant 51872012).

Author information

Authors and Affiliations

  1. School of Physics and Nuclear Engineering, Beihang University, Beijing, 100191, China

    Lingjia Meng & Jinliang Wang

  2. School of Materials Science and Engineering, Beihang University, Beijing, 100191, China

    Lingjia Meng, Yang Ma, Kunpeng Si, Shiyu Xu & Yongji Gong

Authors
  1. Lingjia Meng
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Yang Ma
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Kunpeng Si
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Shiyu Xu
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Jinliang Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Yongji Gong
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding authors

Correspondence to Jinliang Wang or Yongji Gong.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Meng, L., Ma, Y., Si, K. et al. Recent advances of phase engineering in group VI transition metal dichalcogenides. Tungsten 1, 46–58 (2019). https://doi.org/10.1007/s42864-019-00012-x

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s42864-019-00012-x

Keywords

Search

Navigation