Mimicking Synaptic Behaviors with Cross-Point Structured TiOx/TiOy-Based Filamentary RRAM for Neuromorphic Applications
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This paper presents the fabrication and characterization of the cross-point structure 20 × 20 μm2 RRAM with TiOx/TiOy bi-layer insulator for synaptic application in neuromorphic systems. The measured oxygen concentration of the TiOx/TiOy switching layers of the fabricated devices using X-ray photoelectron spectroscopy analysis showed that the oxygen concentration ratio between TiOx and TiOy is ~ 1.5. After electroforming at ~ 5.62 V, the on/off ratio was ~ 76 at 0.2 V with the DC sweep voltage scheme. Synaptic behaviors including long-term potentiation (LTP) and long-term depression (LTD) were performed with 50 identical pulses for the implementation of RRAM into neuromorphic systems based on convolutional neural networks. Also, linearly increased (or decreased) 25 pulses were applied to the device so that the conductance changes linearly. The resulting linear LTP and LTD characteristics were mirror-symmetric, which could maximize the accuracy. For Hebbian learning, the device also mimicked the spike-timing-dependent plasticity properties with a conductance change from − 77.79% to 96.07% using a time-division multiplexing approach.
KeywordsCross-point Neuromorphic Synaptic application RRAM TiOx/TiOy bi-layer
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