Silica Nano-particle Anneal Treatment and Its Effect on Chemical Mechanical Polishing

  • Shibin Lu
  • Haibo Wang
  • Ying Meng
  • Feifei Wang
  • Min Fan
  • Junning Chen
Original Article



Chemical mechanical polishing is the only one technology to obtain global planarization, which is widely applied to polish silicon, copper dual damascene structure, high/low K dielectric materials, tungsten plugs, poly-silicon gates and shallow trench isolation structure. SiO2 is widely used as abrasive for its superior properties like stability, suspension property and low viscosity There are lots of studies on silica properties. However, the detailed silica surface, inner characteristic and its effect on polishing performance are still unclear. we must also explore the silica nano-particle tiny structure difference, so we designed an experiment that we anneal the colloid silica and re-dispersed it to analyze the variety of particles properties and its influences on CMP performance.


The water glass was purchased from the market. KOH (90%) and H2SO4 (98%) were purchased commercially from Shanghai Aladdin Bio-Chem technology Co., Ltd. All reagents were of analytical grade and used without further purification.


Diluted KOH or H2SO4 were added to 1 wt% annealed silica slurry to adjust pH value to 11.0. The slurry was milled in the polishing process. Arsenic doped 4 inch (100) silicon wafer was used to polish. The structural and morphological evolution of silica nano-particles induced by heat treatment are studied by scanning electron microscopy (SEM), X-Ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), differential thermal (DTA) and thermal gravimetric analysis (TGA), which disclose the external and internal structure.


Silicon Chemical mechanical polishing Colloid silica Nano-indentation 



Thanks for discussion of manager Yong Peng from Chizhou NationT Semiconductor CO., LTD. This work is sponsored by Anhui Province Science and Technology Major Project (Grant no. 17030901009), the Key University Natural Science Research Project of Anhui Province (KJ2014A208),Research Foundation for School Talents of Hefei Normal University (Grant no. 2016rcjj07);and the horizontal subject from Chizhou NationT Semiconductor CO., LTD, the title is design and application development of SIP packaging technology based on copper substrate.


  1. 1.
    Wang H-B, Lu S-B, Yang J, Jiang X-W, Song Z-T, Liu W-L (2017) Chemical mechanical polishing of Ge2Sb2Te5 in alkaline slurry. J Vac Sci Technol B 35(4):041204CrossRefGoogle Scholar
  2. 2.
    Wang H, Zhang Z, Lu S (2018) Study of several silica properties influence on sapphire CMP. J Electr Eng Technol 13(2):886–891Google Scholar
  3. 3.
    Bulick AS, Nishizawa H, Moriyama K, Yoshida K, Ezawa S, Arumugam S (2017) Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same. Google PatentsGoogle Scholar
  4. 4.
    Zhou Y, Pan G, Gong H, Shi X (2017) Characterization of sapphire chemical mechanical polishing performances using silica with different sizes and their removal mechanisms. Colloids Surf A Physicochem Eng Aspects 153:153–159CrossRefGoogle Scholar
  5. 5.
    Ein-Eli Y, Starosvetsky D (2007) Review on copper chemical–mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—an electrochemical perspective. Electrochim Acta 52(5):1825–1838CrossRefGoogle Scholar
  6. 6.
    Zhao J, Wu P, Brancewicz C, Li Y (2007) A liposome-containing slurry for tungsten chemical mechanical polishing. J Electrochem Soc 154(3):H225–H230CrossRefGoogle Scholar
  7. 7.
    Lin H, Liu H, Kumar A, Avci U, Van Delden JS, Tiwari S (2006) Super-self-aligned back-gate∕double-gate planar transistors: novel fabrication approach. J Vac Sci Technol B 24(6):3230–3233CrossRefGoogle Scholar
  8. 8.
    Jindal A, Hegde S, Babu S (2002) Chemical mechanical polishing using mixed abrasive slurries. Electrochem Solid-State Lett 5(7):G48–G50CrossRefGoogle Scholar
  9. 9.
    Seo Y-J, Lee W-S (2004) Chemical mechanical polishing of Ba0. 6Sr0. 4TiO3 film prepared by sol–gel method. Microelectron Eng 75(2):149–154CrossRefGoogle Scholar
  10. 10.
    Seo Y-J, Lee W-S (2006) Chemical mechanical polishing characteristics of barium titanate thin films using mixed abrasive slurry. J Korean Phys Soc 48(6):1651–1656Google Scholar
  11. 11.
    Liu T, Lei H (2017) Nd3+-doped colloidal SiO2 composite abrasives: synthesis and the effects on chemical mechanical polishing (CMP) performances of sapphire wafers. Appl Surf Sci 413:16–26CrossRefGoogle Scholar
  12. 12.
    Lei H, Tong K (2016) Preparation of La-doped colloidal SiO2 composite abrasives and their chemical mechanical polishing behavior on sapphire substrates. Precis Eng 44:124–130CrossRefGoogle Scholar
  13. 13.
    Chen Y, Li Z, Qin J, Chen A (2016) Monodispersed mesoporous silica (mSiO2) spheres as abrasives for improved chemical mechanical planarization performance. J Mater Sci 51(12):5811–5822CrossRefGoogle Scholar
  14. 14.
    Zantye PB, Kumar A, Sikder AK (2004) Chemical mechanical planarization for microelectronics applications. Mater Sci Eng R Rep 45(3–6):89–220CrossRefGoogle Scholar
  15. 15.
    Feng X, Sayle DC, Wang ZL, Paras MS, Santora B, Sutorik AC, Sayle TXT, Yang Y, Ding Y, Wang X (2006) Converting ceria polyhedral nanoparticles into single-crystal nanospheres. Science 312(5779):1504CrossRefGoogle Scholar
  16. 16.
    Zhang J, Li S, Carter PW (2007) Chemical mechanical polishing of tantalum aqueous interfacial reactivity of tantalum and tantalum oxide. J Electrochem Soc 154(2):H109–H114CrossRefGoogle Scholar
  17. 17.
    Li Y, Zhao J, Wu P, Lin Y, Babu S, Li Y (2006) Interaction between abrasive particles and films during chemical–mechanical polishing of copper and tantalum. Thin Solid Films 497(1-2):321–328CrossRefGoogle Scholar
  18. 18.
    Zhu H, Tessaroto LA, Sabia R, Greenhut VA, Smith M, Niesz DE (2004) Chemical mechanical polishing (CMP) anisotropy in sapphire. Appl Surf Sci 236(1):120–130CrossRefGoogle Scholar
  19. 19.
    Haba S, Fukuda K, Ohta Y, Koubuchi Y, Katouda T (2003) Fumed silica slurry stabilizing methods for chemical mechanical polishing. Jpn J Appl Phys 42(2R):418CrossRefGoogle Scholar
  20. 20.
    Zhuravlev LT (1993) Characterization of amorphous silica surface. Colloids Surf A 50(1-2):15–25Google Scholar
  21. 21.
    Iler RK (1979) The chemistry of silica: solubility, polimerization, colloid and surface properties, and biochemistry. Wiley, Oxford, p 11Google Scholar
  22. 22.
    Bergna HE, Roberts WO (2005) Colloidal silica: fundamentals and applications. CRC Press, Boca RatonGoogle Scholar
  23. 23.
    Fardad MA (2000) Catalysts and the structure of SiO2 sol–gel films. J Mater Sci 35(7):1835–1841CrossRefGoogle Scholar
  24. 24.
    Bergna HE (1994) Colloid chemistry of silica. American Chemical Society, Washington DC, pp 1–47Google Scholar

Copyright information

© The Korean Institute of Electrical Engineers 2019

Authors and Affiliations

  1. 1.School of Electronics and Information EngineeringAnhui UniversityHefeiChina
  2. 2.School of Electronic Information and Electrical EngineeringHefei Normal UniversityHefeiChina
  3. 3.School of Physics and Materials EngineeringHefei Normal UniversityHefeiChina

Personalised recommendations