Double Junction Characteristics of Amorphous TiO2 Thin Film Due to Various Potential Barriers

  • Teresa OhEmail author
Regular Paper


This report investigated the chemical, physical and electrical properties of TiO2 that was prepared with various oxygen gas flows and annealing temperatures to create different Schottky barriers. The thin films of the Schottky contact with double barriers were observed as increments of the capacitance. The oxygen vacancy increased at the film with the crystal structure and decreased at the film with the amorphous structure. It was confirmed that the current–voltage characteristics differ when observed in the low current area because the formation of potential barrier varies depending on the condition of the interfacing even in thin films with similar amorphous characteristics. Because the size of the potential barrier is mostly small, current is not observed in areas high at μA level, but at nA level, the electrical properties of the potential barrier could be observed more closely by the effect of relatively large potential barriers. It was found that the single and double connections were made depending on the size of the potential barrier at Schottky contact according to the after annealing treatment temperature.


TiO2 XRD Double junction Oxygen vacancy Capacitance 



This work (2019R1H1A2079093) was supported by Mid-career Researcher Program through NRF (National Research Foundation) Grant funded by the MEST (Ministry of Education, Science and Technology).


  1. 1.
    N.T. Phung, N.K. Van Tran, P.A. Duong, H.V.T. Le, N.D. Truong, Effect of co-doping and tri-doping with transition metals and a nonmetal on photocatalytic activity in visible light of TiO2 thin film. J. Korean Phys. Soc. 16, 995 (2017)CrossRefGoogle Scholar
  2. 2.
    T. Oh, C.K. Choi, Comparison between SiOC thin film by plasma enhance chemical vapor deposition and SiO2 thin film by Fourier transform infrared spectroscopy. J. Korean Phys. Soc. 56, 1150–1155 (2010)CrossRefGoogle Scholar
  3. 3.
    M. Angira, High performance capacitive RF-MEMS switch based on HfO2 dielectric. Trans. Electr. Electron. Mater. 20, 52–59 (2019)CrossRefGoogle Scholar
  4. 4.
    J. Zhao, Z. Zhao, Z. Chen, Z. Lin, X. Fukai, Effects of floating gate structures on the two-dimensional electron gas density and electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors. J. Korean Phys. Soc. 71, 963–967 (2017)CrossRefGoogle Scholar
  5. 5.
    J.J. Park, Tensile and electrical insulation properties of epoxy/micro-silica composites. Trans. Electr. Electron. Mater. 20, 67 (2019)CrossRefGoogle Scholar
  6. 6.
    X. Ma, J. Zhang, W. Cai, H. Wang, J. Wilson, Q. Wang, Q. Xin, A. Song, A sputtered silicon oxide electrolyte for high-performance thin-film transistors. Sci. Rep. 7, 809 (2017)CrossRefGoogle Scholar
  7. 7.
    A.B. Khan, M. Sharma, M.J. Siddiqui, S.G. Anjum, Performance analysis of AC and DC characteristics of AlGaN/GaN HEMT at various temperatures. Trans. Electr. Electron. Mater. 19, 90 (2018)CrossRefGoogle Scholar
  8. 8.
    J. Maserjian, N. Zamani, Behavior of the Si/SiO2 interface observed by Fowler–Nordheim tunneling. Appl. Phys. Lett. 53, 559 (1982)Google Scholar
  9. 9.
    T. Oh, Analysis of electrical characteristics of oxide semiconductor of ZnO, SnO2 and ZTO. Korean J. Mater. Res. 25(7), 347 (2015)CrossRefGoogle Scholar
  10. 10.
    S.W. Tsao, T.C. Chang, S.Y. Huang, M.C. Chen, S.C. Chen, C.T. Tsai, Y.J. Kuo, Y.C. Chen, W.C. Wu, Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid State Electron. 54, 1497 (2010)CrossRefGoogle Scholar
  11. 11.
    T. Oh, Effect of double Schottky Barrier in gallium–zinc–oxide thin film. Trans. Electr. Electron. Mater. 18, 323 (2017)CrossRefGoogle Scholar
  12. 12.
    F. Liu, Y. Zhou, Y. Wang, X. Liu, J. Wang, H. Guo, Negative capacitance transistors with monolayer black phosphorus. Quantum Mater. 1, 16004 (2016)CrossRefGoogle Scholar
  13. 13.
    Q. Xin, L. Yan, Y. Luo, A. Song, Influence of interface inhomogeneities in thin-film Schottky diodes. Appl. Phys. Lett. 106, 113506 (2015)CrossRefGoogle Scholar
  14. 14.
    T. Oh, Tunneling condition at high Schottky barrier and ambipolar transfer characteristics in zinc oxide semiconductor thin film transistor. Mater. Res. Bull. 77, 1 (2016)CrossRefGoogle Scholar

Copyright information

© The Korean Institute of Electrical and Electronic Material Engineers 2019

Authors and Affiliations

  1. 1.Department of Semiconductor EngineeringCheongju UniversityCheongjuSouth Korea

Personalised recommendations