Effect of Nitrogen Doping on the Electrical Performance of Amorphous Si–In–Zn–O Thin Film Inverter

  • Ji Ye Lee
  • Sang Yeol LeeEmail author
Regular Paper


An inverter using only n-type amorphous Si–In–Zn–O (a-SIZO) as a channel material has been fabricated and the change of the characteristics, like Vth has been investigated depending on nitrogen doping into a-SIZO. When nitrogen is doped, oxygen vacancy was suppressed in a-SIZO system, so carrier concentration and the characteristic have been changed in a-SIZO. Inverter was fabricated with nitrogen doping and undoped a-SIZO. Inverter behavior has been extracted by VTC graph by applying VDD from 1 to 5 V. It is confirmed with simply nitrogen doped SIZO inverter that a voltage gain of 2.37 was successfully obtained when the VDD was 5 V.


Inverter Nitrogen doping Thin film transistor Amorphous oxide semiconductor 


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Copyright information

© The Korean Institute of Electrical and Electronic Material Engineers 2018

Authors and Affiliations

  1. 1.Department of Semiconductor EngineeringCheongju UniversityCheongjuSouth Korea

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