Effect of Nitrogen Doping on the Electrical Performance of Amorphous Si–In–Zn–O Thin Film Inverter
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An inverter using only n-type amorphous Si–In–Zn–O (a-SIZO) as a channel material has been fabricated and the change of the characteristics, like Vth has been investigated depending on nitrogen doping into a-SIZO. When nitrogen is doped, oxygen vacancy was suppressed in a-SIZO system, so carrier concentration and the characteristic have been changed in a-SIZO. Inverter was fabricated with nitrogen doping and undoped a-SIZO. Inverter behavior has been extracted by VTC graph by applying VDD from 1 to 5 V. It is confirmed with simply nitrogen doped SIZO inverter that a voltage gain of 2.37 was successfully obtained when the VDD was 5 V.
KeywordsInverter Nitrogen doping Thin film transistor Amorphous oxide semiconductor
- 2.S.Y. Lee, Trans. Electr. Electron. Mater. 18, 250 (2017)Google Scholar